Abstract
In this paper, the design and modeling of InP DHBT based millimeter-wave(mm-wave) power amplifiers is described. This includes the modeling of InP DHBT devices and layout parasitics. An EM-circuit co-simulation approach is described to allow all parasitics to be modeled for accurate circuit performance evaluation. A single-branch cascode based PA using single-finger InP DHBT devices shows a measured power gain of 9.2dB and a saturated output power of 12.3dBm at 67.2GHz. The output power at 1dB compression is 9.0dBm. A similar two-way combined cascode based PA using three-finger devices demonstrates a power gain of 4.5dB with a saturated output power of 14.2dBm at 69.2GHz. © 2012 European Microwave Assoc.
| Original language | English |
|---|---|
| Title of host publication | European Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings |
| Publisher | IEEE Computer Society Press |
| Publication date | 2012 |
| Pages | 476 - 479 |
| ISBN (Print) | 9782874870286 |
| Publication status | Published - 2012 |
Keywords
- Microwave integrated circuits
- Millimeter waves
- Power amplifiers