Design and modeling of InP DHBT power amplifiers at millimeter-wave frequencies

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review


In this paper, the design and modeling of InP DHBT based millimeter-wave(mm-wave) power amplifiers is described. This includes the modeling of InP DHBT devices and layout parasitics. An EM-circuit co-simulation approach is described to allow all parasitics to be modeled for accurate circuit performance evaluation. A single-branch cascode based PA using single-finger InP DHBT devices shows a measured power gain of 9.2dB and a saturated output power of 12.3dBm at 67.2GHz. The output power at 1dB compression is 9.0dBm. A similar two-way combined cascode based PA using three-finger devices demonstrates a power gain of 4.5dB with a saturated output power of 14.2dBm at 69.2GHz. © 2012 European Microwave Assoc.
Original languageEnglish
Title of host publicationEuropean Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings
PublisherIEEE Computer Society Press
Publication date2012
Pages476 - 479
ISBN (Print)9782874870286
Publication statusPublished - 2012


  • Microwave integrated circuits
  • Millimeter waves
  • Power amplifiers


Dive into the research topics of 'Design and modeling of InP DHBT power amplifiers at millimeter-wave frequencies'. Together they form a unique fingerprint.

Cite this