Design and modeling of an ultra-wideband low-noise distributed amplifier in InP DHBT technology

T. Shivan*, E. Kaule, M. Hossain, R. Doerner, T. Johansen, D. Stoppel, S. Boppel, W. Heinrich, V. Krozer, M. Rudolph

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review


This paper reports on an ultra-wideband low-noise distributed amplifier (LNDA) in a transferred-substrate InP double heterojunction bipolar transistor (DHBT) technology which exhibits a uniform low-noise characteristic over a large frequency range. To obtain very high bandwidth, a distributed architecture has been chosen with cascode unit gain cells. Each unit cell consists of two cascode-connected transistors with 500 nm emitter length and ft/fmax of ∼360/492 GHz, respectively. Due to optimum line-impedance matching, low common-base transistor capacitance, and low collector-current operation, the circuit exhibits a low-noise figure (NF) over a broad frequency range. A 3-dB bandwidth from 40 to 185 GHz is measured, with an NF of 8 dB within the frequency range between 75 and 105 GHz. Moreover, this circuit demonstrates the widest 3-dB bandwidth operation among all reported single-stage amplifiers with a cascode configuration. Additionally, this work has proposed that the noise sources of the InP DHBTs are largely uncorrelated. As a result, a reliable prediction can be done for the NF of ultra-wideband circuits beyond the frequency range of the measurement equipment.

Original languageEnglish
JournalInternational Journal of Microwave and Wireless Technologies
Issue number7
Pages (from-to)635-644
Publication statusPublished - 1 Sep 2019


  • Cascode
  • Distributed amplifier
  • InP DHBT
  • Low noise amplifier
  • Travelling wave
  • Ultra-wideband amplifier

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