Design and Analysis of a 50GHz InP DHBT Class-E Power Amplifier Providing 2.3 mW/μm2

Venkata Pawan Sriperumbuduri; Hady Yacoub; Andreas Wentzel; Tom K. Johansen; Matthias Rudolph

doi:10.23919/EuMIC58042.2023.10288688

Design and Analysis of a 50GHz InP DHBT Class-E Power Amplifier Providing 2.3 mW/μm²

Venkata Pawan Sriperumbuduri, Hady Yacoub, Andreas Wentzel, Tom K. Johansen, Matthias Rudolph

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

For the commercial success of mm-wave 5G technologies, there is a need for high-output power and efficient power amplifier systems. In this paper, we demonstrate the capability of InP DHBT devices at the V band and achieve a high power density of 2.3 mW/μm² at 50GHz. The simulated and measured class E is analysed and compared with an analytical HBT switching model. A single-stage, single-finger of 0.85×6μm²(emitter area) class E power amplifier is designed to reach this high power density with a PAE of 28.3%.

Original language	English
Title of host publication	18th European Microwave Integrated Circuits Conference (EuMIC)
Publisher	IEEE
Publication date	2023
Pages	285-288
DOIs	https://doi.org/10.23919/EuMIC58042.2023.10288688
Publication status	Published - 2023
Event	18th European Microwave Integrated Circuits Conference (EuMIC) - Berlin, Germany Duration: 18 Sept 2023 → 19 Sept 2023

Conference

Conference	18th European Microwave Integrated Circuits Conference (EuMIC)
Country/Territory	Germany
City	Berlin
Period	18/09/2023 → 19/09/2023

Keywords

Class E
HBT
InP DHBT
Analytical switch model
Power amplifier
Power density

Access to Document

10.23919/EuMIC58042.2023.10288688

OpenUrl availability

Full text

Cite this

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title = "Design and Analysis of a 50GHz InP DHBT Class-E Power Amplifier Providing 2.3 mW/μm2",

abstract = "For the commercial success of mm-wave 5G technologies, there is a need for high-output power and efficient power amplifier systems. In this paper, we demonstrate the capability of InP DHBT devices at the V band and achieve a high power density of 2.3 mW/μm2 at 50GHz. The simulated and measured class E is analysed and compared with an analytical HBT switching model. A single-stage, single-finger of 0.85×6μm2 (emitter area) class E power amplifier is designed to reach this high power density with a PAE of 28.3\%.",

keywords = "Class E, HBT, InP DHBT, Analytical switch model, Power amplifier, Power density",

author = "Sriperumbuduri, \{Venkata Pawan\} and Hady Yacoub and Andreas Wentzel and Johansen, \{Tom K.\} and Matthias Rudolph",

year = "2023",

doi = "10.23919/EuMIC58042.2023.10288688",

language = "English",

pages = "285--288",

booktitle = "18th European Microwave Integrated Circuits Conference (EuMIC)",

publisher = "IEEE",

address = "United States",

note = "18th European Microwave Integrated Circuits Conference (EuMIC) ; Conference date: 18-09-2023 Through 19-09-2023",

}

Sriperumbuduri, VP, Yacoub, H, Wentzel, A, Johansen, TK & Rudolph, M 2023, Design and Analysis of a 50GHz InP DHBT Class-E Power Amplifier Providing 2.3 mW/μm². in 18th European Microwave Integrated Circuits Conference (EuMIC). IEEE, pp. 285-288, 18th European Microwave Integrated Circuits Conference (EuMIC), Berlin, Berlin, Germany, 18/09/2023. https://doi.org/10.23919/EuMIC58042.2023.10288688

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T1 - Design and Analysis of a 50GHz InP DHBT Class-E Power Amplifier Providing 2.3 mW/μm2

AU - Sriperumbuduri, Venkata Pawan

AU - Yacoub, Hady

AU - Wentzel, Andreas

AU - Johansen, Tom K.

AU - Rudolph, Matthias

PY - 2023

Y1 - 2023

N2 - For the commercial success of mm-wave 5G technologies, there is a need for high-output power and efficient power amplifier systems. In this paper, we demonstrate the capability of InP DHBT devices at the V band and achieve a high power density of 2.3 mW/μm2 at 50GHz. The simulated and measured class E is analysed and compared with an analytical HBT switching model. A single-stage, single-finger of 0.85×6μm2 (emitter area) class E power amplifier is designed to reach this high power density with a PAE of 28.3%.

AB - For the commercial success of mm-wave 5G technologies, there is a need for high-output power and efficient power amplifier systems. In this paper, we demonstrate the capability of InP DHBT devices at the V band and achieve a high power density of 2.3 mW/μm2 at 50GHz. The simulated and measured class E is analysed and compared with an analytical HBT switching model. A single-stage, single-finger of 0.85×6μm2 (emitter area) class E power amplifier is designed to reach this high power density with a PAE of 28.3%.

KW - Class E

KW - HBT

KW - InP DHBT

KW - Analytical switch model

KW - Power amplifier

KW - Power density

U2 - 10.23919/EuMIC58042.2023.10288688

DO - 10.23919/EuMIC58042.2023.10288688

M3 - Article in proceedings

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EP - 288

BT - 18th European Microwave Integrated Circuits Conference (EuMIC)

PB - IEEE

T2 - 18th European Microwave Integrated Circuits Conference (EuMIC)

Y2 - 18 September 2023 through 19 September 2023

ER -