Design and Analysis of a 50GHz InP DHBT Class-E Power Amplifier Providing 2.3 mW/μm2

Venkata Pawan Sriperumbuduri, Hady Yacoub, Andreas Wentzel, Tom K. Johansen, Matthias Rudolph

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

For the commercial success of mm-wave 5G technologies, there is a need for high-output power and efficient power amplifier systems. In this paper, we demonstrate the capability of InP DHBT devices at the V band and achieve a high power density of 2.3 mW/μm2 at 50GHz. The simulated and measured class E is analysed and compared with an analytical HBT switching model. A single-stage, single-finger of 0.85×6μm2 (emitter area) class E power amplifier is designed to reach this high power density with a PAE of 28.3%.
Original languageEnglish
Title of host publication18th European Microwave Integrated Circuits Conference (EuMIC)
PublisherIEEE
Publication date2023
Pages285-288
DOIs
Publication statusPublished - 2023
Event18th European Microwave Integrated Circuits Conference (EuMIC) - Berlin, Germany
Duration: 18 Sept 202319 Sept 2023

Conference

Conference18th European Microwave Integrated Circuits Conference (EuMIC)
Country/TerritoryGermany
CityBerlin
Period18/09/202319/09/2023

Keywords

  • Class E
  • HBT
  • InP DHBT
  • Analytical switch model
  • Power amplifier
  • Power density

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