TY - JOUR
T1 - Deposition and characterization of ITO films produced by laser ablation at 355 nm
AU - Holmelund, E.
AU - Thestrup Nielsen, Birgitte
AU - Schou, Jørgen
AU - Larsen, Niels Bent
AU - Nielsen, Martin Meedom
AU - Johnson, E.
AU - Tougaard, S.
PY - 2002
Y1 - 2002
N2 - Indium tin oxide (ITO) films have been deposited by pulsed laser deposition (PLD) at 355 nm. Even though the absorption of laser light at the wavelength 355 nm is much smaller than that of the standard excimer lasers for PLD at 248 nm and 193 nm, high-quality films can be produced. At high fluence and at high substrate temperatures, the specific resistivity of the films, 2–3×10-4 Ω cm, is comparable to values obtained with excimer lasers, whereas the resistivities obtained at room temperature are somewhat higher than those of films produced by excimer lasers. The transmission coefficient of visible light, about 0.9, is also comparable to values for films deposited by excimer lasers. The crystalline structure of films produced at 355 nm is similar to that of samples produced by these lasers.
AB - Indium tin oxide (ITO) films have been deposited by pulsed laser deposition (PLD) at 355 nm. Even though the absorption of laser light at the wavelength 355 nm is much smaller than that of the standard excimer lasers for PLD at 248 nm and 193 nm, high-quality films can be produced. At high fluence and at high substrate temperatures, the specific resistivity of the films, 2–3×10-4 Ω cm, is comparable to values obtained with excimer lasers, whereas the resistivities obtained at room temperature are somewhat higher than those of films produced by excimer lasers. The transmission coefficient of visible light, about 0.9, is also comparable to values for films deposited by excimer lasers. The crystalline structure of films produced at 355 nm is similar to that of samples produced by these lasers.
KW - 6-I optik
U2 - 10.1007/s003390100976
DO - 10.1007/s003390100976
M3 - Journal article
SN - 0947-8396
VL - 74
SP - 147
EP - 152
JO - Applied Physics A: Materials Science & Processing
JF - Applied Physics A: Materials Science & Processing
IS - 2
ER -