Abstract
The temperature dependent dephasing of the biexcitonic resonance
in a homogeneously broadened single quantum well is studied by
transient four-wave mixing. Using cross-linear excitation
polarization, we deduce the biexcitonic and excitonic dephasing
rates from the delay-time dependence of the FWM signal at the
biexcitonic resonance for negative and positive delay times,
respectively. The ratio between the dephasing rates of biexcitons
and excitons is found to be close to two for kBT larger than the
biexciton binding energy. At lower temperatures, the ratio drops
significantly. This demonstrates that biexcitonic dephasing at
high temperature is connected to thermal dissociation, and that
the intrinsic low-temperature dephasing time of biexcitons can be
longer than that of excitons.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the 24th International Conference on The Physics of Semiconductors |
| Place of Publication | Singapore |
| Publisher | World Scientific |
| Publication date | 1999 |
| Publication status | Published - 1999 |
| Event | 24th International Conference on The Physics of Semiconductors - Jerusalem, Israel Duration: 2 Aug 1998 → 7 Aug 1998 Conference number: 24 http://physics.technion.ac.il/~icps24/ |
Conference
| Conference | 24th International Conference on The Physics of Semiconductors |
|---|---|
| Number | 24 |
| Country/Territory | Israel |
| City | Jerusalem |
| Period | 02/08/1998 → 07/08/1998 |
| Internet address |
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