Dephasing of Quasi-2D Biexcitons

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

    Abstract

    The temperature dependent dephasing of the biexcitonic resonance in a homogeneously broadened single quantum well is studied by transient four-wave mixing. Using cross-linear excitation polarization, we deduce the biexcitonic and excitonic dephasing rates from the delay-time dependence of the FWM signal at the biexcitonic resonance for negative and positive delay times, respectively. The ratio between the dephasing rates of biexcitons and excitons is found to be close to two for kBT larger than the biexciton binding energy. At lower temperatures, the ratio drops significantly. This demonstrates that biexcitonic dephasing at high temperature is connected to thermal dissociation, and that the intrinsic low-temperature dephasing time of biexcitons can be longer than that of excitons.
    Original languageEnglish
    Title of host publicationProceedings of the 24th International Conference on The Physics of Semiconductors
    Place of PublicationSingapore
    PublisherWorld Scientific
    Publication date1999
    Publication statusPublished - 1999
    Event24th International Conference on The Physics of Semiconductors - Jerusalem, Israel
    Duration: 2 Aug 19987 Aug 1998
    Conference number: 24
    http://physics.technion.ac.il/~icps24/

    Conference

    Conference24th International Conference on The Physics of Semiconductors
    Number24
    Country/TerritoryIsrael
    CityJerusalem
    Period02/08/199807/08/1998
    Internet address

    Cite this