Dephasing in self-organized InAlGaAs quantum dots

K. Leosson, Dan Birkedal, Jørn Märcher Hvam

Research output: Contribution to journalConference articleResearchpeer-review

Abstract

We report the first direct measurements of dephasing in III-V semiconductor quantum dots at low temperature using degenerate four-wave mixing. At OK, the coherence time is limited by the population lifetime whereas pure dephasing due to exciton-phonon interactions appears only at finite temperatures. We observe a striking discrepancy between the homogenous linewidth derived from the dephasing times and the measured photoluminescene linewidth of individual quantum dots, indicating the presence of an additional inhomogenous broadening mechanism in photoluminescence measurements of single quantum dots.
Original languageEnglish
JournalPhysica Sripta
VolumeT101
Pages (from-to)143-146
ISSN0031-8949
DOIs
Publication statusPublished - 2002
Event19th Nordic Semiconductor Meeting - Gentofte, Denmark
Duration: 20 May 200123 May 2001
Conference number: 19

Conference

Conference19th Nordic Semiconductor Meeting
Number19
Country/TerritoryDenmark
CityGentofte
Period20/05/200123/05/2001

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