Dephasing in InAs/GaAs quantum dots

Paola Borri; Wolfgang Werner Langbein; Jesper Mørk; Jørn Märcher Hvam; F. Heinrichsdorff; M.-H. Mao; Dieter Bimberg

doi:10.1103/PhysRevB.60.7784

Dephasing in InAs/GaAs quantum dots

Paola Borri
, Wolfgang Werner Langbein
, Jesper Mørk
, Jørn Märcher Hvam
, F. Heinrichsdorff
, M.-H. Mao
, Dieter Bimberg

Technische Universität Berlin

Research output: Contribution to journal › Journal article › Research › peer-review

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Abstract

The room-temperature dephasing in InAs/GaAs self-assembled quantum dots is measured using two independent methods: spectal-hole burning and four-wave mixing. Dephasing times weakly dependent on the excitation density are found, with a low density value of 290+/-80 fs from spectal-hole burning and of 260+/-20 fs from four-wave mixing.

Original language	English
Journal	Physical Review B
Volume	60
Issue number	11
Pages (from-to)	7784-7787
ISSN	2469-9950
DOIs	https://doi.org/10.1103/PhysRevB.60.7784
Publication status	Published - 1999

Bibliographical note

Copyright (1999) by the American Physical Society.

Keywords

TIME
GAAS
LASERS
SPECTROSCOPY
SEMICONDUCTOR
OPTICAL AMPLIFIERS
PROBE
DYNAMICS
EXCITONS
SUBPICOSECOND GAIN

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@article{ef1c8f2f8b3e4668ab7e7273309f74a1,

title = "Dephasing in InAs/GaAs quantum dots",

abstract = "The room-temperature dephasing in InAs/GaAs self-assembled quantum dots is measured using two independent methods: spectal-hole burning and four-wave mixing. Dephasing times weakly dependent on the excitation density are found, with a low density value of 290+/-80 fs from spectal-hole burning and of 260+/-20 fs from four-wave mixing.",

keywords = "TIME, GAAS, LASERS, SPECTROSCOPY, SEMICONDUCTOR, OPTICAL AMPLIFIERS, PROBE, DYNAMICS, EXCITONS, SUBPICOSECOND GAIN",

author = "Paola Borri and Langbein, \{Wolfgang Werner\} and Jesper M{\o}rk and Hvam, \{J{\o}rn M{\"a}rcher\} and F. Heinrichsdorff and M.-H. Mao and Dieter Bimberg",

note = "Copyright (1999) by the American Physical Society.",

year = "1999",

doi = "10.1103/PhysRevB.60.7784",

language = "English",

volume = "60",

pages = "7784--7787",

journal = "Physical Review B",

issn = "2469-9950",

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T1 - Dephasing in InAs/GaAs quantum dots

AU - Borri, Paola

AU - Langbein, Wolfgang Werner

AU - Mørk, Jesper

AU - Hvam, Jørn Märcher

AU - Heinrichsdorff, F.

AU - Mao, M.-H.

AU - Bimberg, Dieter

N1 - Copyright (1999) by the American Physical Society.

PY - 1999

Y1 - 1999

N2 - The room-temperature dephasing in InAs/GaAs self-assembled quantum dots is measured using two independent methods: spectal-hole burning and four-wave mixing. Dephasing times weakly dependent on the excitation density are found, with a low density value of 290+/-80 fs from spectal-hole burning and of 260+/-20 fs from four-wave mixing.

AB - The room-temperature dephasing in InAs/GaAs self-assembled quantum dots is measured using two independent methods: spectal-hole burning and four-wave mixing. Dephasing times weakly dependent on the excitation density are found, with a low density value of 290+/-80 fs from spectal-hole burning and of 260+/-20 fs from four-wave mixing.

KW - TIME

KW - GAAS

KW - LASERS

KW - SPECTROSCOPY

KW - SEMICONDUCTOR

KW - OPTICAL AMPLIFIERS

KW - PROBE

KW - DYNAMICS

KW - EXCITONS

KW - SUBPICOSECOND GAIN

U2 - 10.1103/PhysRevB.60.7784

DO - 10.1103/PhysRevB.60.7784

M3 - Journal article

SN - 2469-9950

VL - 60

SP - 7784

EP - 7787

JO - Physical Review B

JF - Physical Review B

IS - 11

ER -

Dephasing in InAs/GaAs quantum dots

Abstract

Bibliographical note

Keywords

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