Dephasing in InAs/GaAs quantum dots

Paola Borri, Wolfgang Werner Langbein, Jesper Mørk, Jørn Märcher Hvam, F. Heinrichsdorff, M.-H. Mao, Dieter Bimberg

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Abstract

The room-temperature dephasing in InAs/GaAs self-assembled quantum dots is measured using two independent methods: spectal-hole burning and four-wave mixing. Dephasing times weakly dependent on the excitation density are found, with a low density value of 290+/-80 fs from spectal-hole burning and of 260+/-20 fs from four-wave mixing.
Original languageEnglish
JournalPhysical Review B
Volume60
Issue number11
Pages (from-to)7784-7787
ISSN2469-9950
DOIs
Publication statusPublished - 1999

Bibliographical note

Copyright (1999) by the American Physical Society.

Keywords

  • TIME
  • GAAS
  • LASERS
  • SPECTROSCOPY
  • SEMICONDUCTOR
  • OPTICAL AMPLIFIERS
  • PROBE
  • DYNAMICS
  • EXCITONS
  • SUBPICOSECOND GAIN

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