Density-dependent electron scattering in photoexcited GaAs in strongly diffusive regime

Zoltán Mics, Andrea D’Angio, Søren A. Jensen, Mischa Bonn, Dmitry Turchinovich

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Abstract

In a series of systematic optical pump–terahertz probe experiments, we study the density-dependent electron scattering rate in photoexcited GaAs in the regime of strong carrier diffusion. The terahertz frequency-resolved transient sheet conductivity spectra are perfectly described by the Drude model, directly yielding the electron scattering rates. A diffusion model is applied to determine the spatial extent of the photoexcited electron-hole gas at each moment after photoexcitation, yielding the time-dependent electron density, and hence the density-dependent electron scattering time. We find that the electron scattering time decreases from 320 to 60 fs, as the electron density changes from 1015 to 1019 cm−3.

Original languageEnglish
JournalApplied Physics Letters
Volume102
Pages (from-to)231120
Number of pages3
ISSN0003-6951
DOIs
Publication statusPublished - 2013

Bibliographical note

Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters / Volume 102 / Issue 23 and may be found at http://apl.aip.org/resource/1/applab/v102/i23/p231120_s1.

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