Density-dependent electron scattering in photoexcited GaAs

Zoltán Mics; Andrea D'Angio; Søren A. Jensen; Mischa Bonn; Dmitry Turchinovich

doi:10.1109/IRMMW-THz.2013.6665922

Density-dependent electron scattering in photoexcited GaAs

Zoltán Mics, Andrea D'Angio, Søren A. Jensen, Mischa Bonn, Dmitry Turchinovich

Max Planck Institute

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

—In a series of systematic optical pump - terahertz probe experiments we study the density-dependent electron scattering rate in photoexcited GaAs in a large range of carrier densities. The electron scattering time decreases by as much as a factor of 4, from 320 to 60 fs, as the electron density changes by 4 orders of magnitude, from 10¹⁵ to 10¹⁹ cm^-3.

Original language	English
Title of host publication	Proceedings of the 38th International Conference on Infrared, Millimeter and Terahertz Waves IRMMW-THz 2013
Number of pages	2
Publisher	IEEE
Publication date	2013
DOIs	https://doi.org/10.1109/IRMMW-THz.2013.6665922
Publication status	Published - 2013
Event	38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2013) - Mainz, Germany Duration: 1 Sept 2013 → 6 Sept 2013 http://www.theconference2013.com

Conference

Conference	38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2013)
Country/Territory	Germany
City	Mainz
Period	01/09/2013 → 06/09/2013
Internet address	http://www.theconference2013.com

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@inproceedings{499d13780b3c45e79aa1a559283f23a9,

title = "Density-dependent electron scattering in photoexcited GaAs",

abstract = "—In a series of systematic optical pump - terahertz probe experiments we study the density-dependent electron scattering rate in photoexcited GaAs in a large range of carrier densities. The electron scattering time decreases by as much as a factor of 4, from 320 to 60 fs, as the electron density changes by 4 orders of magnitude, from 1015 to 1019 cm-3.",

author = "Zolt{\'a}n Mics and Andrea D'Angio and Jensen, {S{\o}ren A.} and Mischa Bonn and Dmitry Turchinovich",

year = "2013",

doi = "10.1109/IRMMW-THz.2013.6665922",

language = "English",

booktitle = "Proceedings of the 38th International Conference on Infrared, Millimeter and Terahertz Waves IRMMW-THz 2013",

publisher = "IEEE",

address = "United States",

note = "38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2013) ; Conference date: 01-09-2013 Through 06-09-2013",

url = "http://www.theconference2013.com",

}

Mics, Z, D'Angio, A, Jensen, SA, Bonn, M & Turchinovich, D 2013, Density-dependent electron scattering in photoexcited GaAs. in Proceedings of the 38th International Conference on Infrared, Millimeter and Terahertz Waves IRMMW-THz 2013. IEEE, 38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2013), Mainz, Germany, 01/09/2013. https://doi.org/10.1109/IRMMW-THz.2013.6665922

TY - GEN

T1 - Density-dependent electron scattering in photoexcited GaAs

AU - Mics, Zoltán

AU - D'Angio, Andrea

AU - Jensen, Søren A.

AU - Bonn, Mischa

AU - Turchinovich, Dmitry

PY - 2013

Y1 - 2013

N2 - —In a series of systematic optical pump - terahertz probe experiments we study the density-dependent electron scattering rate in photoexcited GaAs in a large range of carrier densities. The electron scattering time decreases by as much as a factor of 4, from 320 to 60 fs, as the electron density changes by 4 orders of magnitude, from 1015 to 1019 cm-3.

AB - —In a series of systematic optical pump - terahertz probe experiments we study the density-dependent electron scattering rate in photoexcited GaAs in a large range of carrier densities. The electron scattering time decreases by as much as a factor of 4, from 320 to 60 fs, as the electron density changes by 4 orders of magnitude, from 1015 to 1019 cm-3.

U2 - 10.1109/IRMMW-THz.2013.6665922

DO - 10.1109/IRMMW-THz.2013.6665922

M3 - Article in proceedings

BT - Proceedings of the 38th International Conference on Infrared, Millimeter and Terahertz Waves IRMMW-THz 2013

PB - IEEE

T2 - 38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2013)

Y2 - 1 September 2013 through 6 September 2013

ER -

Density-dependent electron scattering in photoexcited GaAs

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