Density-dependent electron scattering in photoexcited GaAs

Zoltán Mics, Andrea D'’Angio, Søren A. Jensen, Mischa Bonn, Dmitry Turchinovich

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Abstract

—In a series of systematic optical pump - terahertz probe experiments we study the density-dependent electron scattering rate in photoexcited GaAs in a large range of carrier densities. The electron scattering time decreases by as much as a factor of 4, from 320 to 60 fs, as the electron density changes by 4 orders of magnitude, from 1015 to 1019 cm-3.

Original languageEnglish
Title of host publicationProceedings of the 38th International Conference on Infrared, Millimeter and Terahertz Waves IRMMW-THz 2013
Number of pages2
PublisherIEEE
Publication date2013
DOIs
Publication statusPublished - 2013
Event38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2013) - Mainz, Germany
Duration: 1 Sep 20136 Sep 2013
http://www.theconference2013.com

Conference

Conference38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2013)
CountryGermany
CityMainz
Period01/09/201306/09/2013
Internet address

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