Defect/oxygen assisted direct write technique for nanopatterning graphene

Alberto Cagliani, Niclas Lindvall, Martin Benjamin Barbour Spanget Larsen, David M. A. Mackenzie, Bjarke Sørensen Jessen, Timothy J. Booth, Peter Bøggild

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Abstract

High resolution nanopatterning of graphene enables manipulation of electronic, optical and sensing properties of graphene. In this work we present a straightforward technique that does not require any lithographic mask to etch nanopatterns into graphene. The technique relies on the damaged graphene to be etched selectively in an oxygen rich environment with respect to non-damaged graphene. Sub-40 nm features were etched into graphene by selectively exposing it to a 100 keV electron beam and then etching the damaged areas away in a conventional oven. Raman spectroscopy was used to evaluate the extent of damage induced by the electron beam as well as the effects of the selective oxidative etching on the remaining graphene.
Original languageEnglish
JournalNanoscale
Volume7
Issue number14
Pages (from-to)6271-6277
Number of pages7
ISSN2040-3364
DOIs
Publication statusPublished - 2015

Bibliographical note

This article is published Open Access as part of the RSC's Gold for Gold initiative, licensed under a Creative Commons Attribution 3.0 Unported Licence.

Keywords

  • CHEMISTRY,
  • NANOSCIENCE
  • MATERIALS
  • PHYSICS,
  • PATTERNING GRAPHENE
  • RAMAN-SPECTROSCOPY
  • COPOLYMER
  • LITHOGRAPHY
  • ORIENTATION
  • STABILITY
  • SUBSTRATE
  • OXIDATION
  • NANOMESH
  • DOMAINS

Cite this

Cagliani, A., Lindvall, N., Larsen, M. B. B. S., Mackenzie, D. M. A., Jessen, B. S., Booth, T. J., & Bøggild, P. (2015). Defect/oxygen assisted direct write technique for nanopatterning graphene. Nanoscale, 7(14), 6271-6277. https://doi.org/10.1039/c4nr07585d