Defect State Assisted Z-scheme Charge Recombinationin Bi2O2CO3/Graphene Quantum DotComposites For Photocatalytic Oxidation of NO

Yang Liu, Ying Zhou, Shan Yu, Zhanghui Xie, Yi Chen, Kaiwen Zheng, Susanne Mossin, Weihua Lin, Jie Meng, Tonu Pullerits, Kaibo Zheng*

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

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Abstract

In this work, we explored the photoinduced charge carriers dynamics rationalizing the photocatalytic oxidation of NO over N-doped Bi2O2CO3/graphene quantum dots composites(N-BOC/GQDs) via time-resolved photoluminescence (TRPL). Under visible light illumination, only GQDs can be photoexcited and inject electrons to N-BOC within 0.5 ns. Under UV light irradiation, the interfacial Z-scheme heterojunction recombination between the electrons in N-BOC and holes in GQDs dominate the depopulation of excited states within 0.36 ns. Such efficient Z-scheme recombination regardless of the large energy difference (1.66 eV) is mediated by the interfacial oxygen vacany defect states characterized by both density functional theory calculations (DFT) and electron paramagnetic resonance (EPR) measurement. This finding provide a novel strategic view to improve the photocatalytic performance of the nanocomposite by interfacial engineering
Original languageEnglish
JournalACS Applied Nano Materials
Volume3
Issue number1
Pages (from-to)772-781
ISSN2574-0970
DOIs
Publication statusPublished - 2020

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