Defect State Assisted Z-scheme Charge Recombinationin Bi2O2CO3/Graphene Quantum DotComposites For Photocatalytic Oxidation of NO

Yang Liu; Ying Zhou; Shan Yu; Zhanghui Xie; Yi Chen; Kaiwen Zheng; Susanne Mossin; Weihua Lin; Jie Meng; Tonu Pullerits; Kaibo Zheng

doi:10.1021/acsanm.9b02276

Defect State Assisted Z-scheme Charge Recombinationin Bi₂O₂CO₃/Graphene Quantum DotComposites For Photocatalytic Oxidation of NO

Yang Liu, Ying Zhou, Shan Yu, Zhanghui Xie, Yi Chen, Kaiwen Zheng, Susanne Mossin, Weihua Lin, Jie Meng, Tonu Pullerits, Kaibo Zheng^*

^*Corresponding author for this work

Department of Chemistry

Research output: Contribution to journal › Journal article › Research › peer-review

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Abstract

In this work, we explored the photoinduced charge carriers dynamics rationalizing the photocatalytic oxidation of NO over N-doped Bi2O2CO3/graphene quantum dots composites(N-BOC/GQDs) via time-resolved photoluminescence (TRPL). Under visible light illumination, only GQDs can be photoexcited and inject electrons to N-BOC within 0.5 ns. Under UV light irradiation, the interfacial Z-scheme heterojunction recombination between the electrons in N-BOC and holes in GQDs dominate the depopulation of excited states within 0.36 ns. Such efficient Z-scheme recombination regardless of the large energy difference (1.66 eV) is mediated by the interfacial oxygen vacany defect states characterized by both density functional theory calculations (DFT) and electron paramagnetic resonance (EPR) measurement. This finding provide a novel strategic view to improve the photocatalytic performance of the nanocomposite by interfacial engineering

Original language	English
Journal	ACS Applied Nano Materials
Volume	3
Issue number	1
Pages (from-to)	772-781
ISSN	2574-0970
DOIs	https://doi.org/10.1021/acsanm.9b02276
Publication status	Published - 2020

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@article{e665ee2e57cb44eb96a16c9f383feeab,

title = "Defect State Assisted Z-scheme Charge Recombinationin Bi2O2CO3/Graphene Quantum DotComposites For Photocatalytic Oxidation of NO",

abstract = "In this work, we explored the photoinduced charge carriers dynamics rationalizing the photocatalytic oxidation of NO over N-doped Bi2O2CO3/graphene quantum dots composites(N-BOC/GQDs) via time-resolved photoluminescence (TRPL). Under visible light illumination, only GQDs can be photoexcited and inject electrons to N-BOC within 0.5 ns. Under UV light irradiation, the interfacial Z-scheme heterojunction recombination between the electrons in N-BOC and holes in GQDs dominate the depopulation of excited states within 0.36 ns. Such efficient Z-scheme recombination regardless of the large energy difference (1.66 eV) is mediated by the interfacial oxygen vacany defect states characterized by both density functional theory calculations (DFT) and electron paramagnetic resonance (EPR) measurement. This finding provide a novel strategic view to improve the photocatalytic performance of the nanocomposite by interfacial engineering",

author = "Yang Liu and Ying Zhou and Shan Yu and Zhanghui Xie and Yi Chen and Kaiwen Zheng and Susanne Mossin and Weihua Lin and Jie Meng and Tonu Pullerits and Kaibo Zheng",

year = "2020",

doi = "10.1021/acsanm.9b02276",

language = "English",

volume = "3",

pages = "772--781",

journal = "ACS Applied Nano Materials ",

issn = "2574-0970",

publisher = "AMER CHEMICAL SOC",

number = "1",

}

TY - JOUR

T1 - Defect State Assisted Z-scheme Charge Recombinationin Bi2O2CO3/Graphene Quantum DotComposites For Photocatalytic Oxidation of NO

AU - Liu, Yang

AU - Zhou, Ying

AU - Yu, Shan

AU - Xie, Zhanghui

AU - Chen, Yi

AU - Zheng, Kaiwen

AU - Mossin, Susanne

AU - Lin, Weihua

AU - Meng, Jie

AU - Pullerits, Tonu

AU - Zheng, Kaibo

PY - 2020

Y1 - 2020

N2 - In this work, we explored the photoinduced charge carriers dynamics rationalizing the photocatalytic oxidation of NO over N-doped Bi2O2CO3/graphene quantum dots composites(N-BOC/GQDs) via time-resolved photoluminescence (TRPL). Under visible light illumination, only GQDs can be photoexcited and inject electrons to N-BOC within 0.5 ns. Under UV light irradiation, the interfacial Z-scheme heterojunction recombination between the electrons in N-BOC and holes in GQDs dominate the depopulation of excited states within 0.36 ns. Such efficient Z-scheme recombination regardless of the large energy difference (1.66 eV) is mediated by the interfacial oxygen vacany defect states characterized by both density functional theory calculations (DFT) and electron paramagnetic resonance (EPR) measurement. This finding provide a novel strategic view to improve the photocatalytic performance of the nanocomposite by interfacial engineering

AB - In this work, we explored the photoinduced charge carriers dynamics rationalizing the photocatalytic oxidation of NO over N-doped Bi2O2CO3/graphene quantum dots composites(N-BOC/GQDs) via time-resolved photoluminescence (TRPL). Under visible light illumination, only GQDs can be photoexcited and inject electrons to N-BOC within 0.5 ns. Under UV light irradiation, the interfacial Z-scheme heterojunction recombination between the electrons in N-BOC and holes in GQDs dominate the depopulation of excited states within 0.36 ns. Such efficient Z-scheme recombination regardless of the large energy difference (1.66 eV) is mediated by the interfacial oxygen vacany defect states characterized by both density functional theory calculations (DFT) and electron paramagnetic resonance (EPR) measurement. This finding provide a novel strategic view to improve the photocatalytic performance of the nanocomposite by interfacial engineering

U2 - 10.1021/acsanm.9b02276

DO - 10.1021/acsanm.9b02276

M3 - Journal article

SN - 2574-0970

VL - 3

SP - 772

EP - 781

JO - ACS Applied Nano Materials

JF - ACS Applied Nano Materials

IS - 1

ER -