Deep Reactive Ion Etching for High Aspect Ratio Microelectromechanical Components

Søren Jensen, Arda Deniz Yalcinkaya, S. Jacobsen, T. Rasmussen, Frank Engel Rasmussen, Ole Hansen

    Research output: Contribution to journalJournal articleResearchpeer-review

    Abstract

    A deep reactive ion etch (DRIE) process for fabrication of high aspect ratio trenches has been developed. Trenches with aspect ratios exceeding 20 and vertical sidewalls with low roughness have been demonstrated. The process has successfully been used in the fabrication of silicon-on-insulator (SOI) released comb drive based resonators and tunable capacitors for MEMS applications. Brief characterizations of the devices are presented.
    Original languageEnglish
    JournalPhysica Scripta. Topical Issues
    VolumeT114
    Pages (from-to)188-192
    ISSN0281-1847
    DOIs
    Publication statusPublished - 2004

    Fingerprint Dive into the research topics of 'Deep Reactive Ion Etching for High Aspect Ratio Microelectromechanical Components'. Together they form a unique fingerprint.

    Cite this