Deep Reactive Ion Etching for High Aspect Ratio Microelectromechanical Components

Søren Jensen, Arda Deniz Yalcinkaya, S. Jacobsen, T. Rasmussen, Frank Engel Rasmussen, Ole Hansen

    Research output: Contribution to journalJournal articleResearchpeer-review

    Abstract

    A deep reactive ion etch (DRIE) process for fabrication of high aspect ratio trenches has been developed. Trenches with aspect ratios exceeding 20 and vertical sidewalls with low roughness have been demonstrated. The process has successfully been used in the fabrication of silicon-on-insulator (SOI) released comb drive based resonators and tunable capacitors for MEMS applications. Brief characterizations of the devices are presented.
    Original languageEnglish
    JournalPhysica Scripta. Topical Issues
    VolumeT114
    Pages (from-to)188-192
    ISSN0281-1847
    DOIs
    Publication statusPublished - 2004

    Cite this

    Jensen, Søren ; Yalcinkaya, Arda Deniz ; Jacobsen, S. ; Rasmussen, T. ; Rasmussen, Frank Engel ; Hansen, Ole. / Deep Reactive Ion Etching for High Aspect Ratio Microelectromechanical Components. In: Physica Scripta. Topical Issues. 2004 ; Vol. T114. pp. 188-192.
    @article{af208149757f4dd99418abd56c436897,
    title = "Deep Reactive Ion Etching for High Aspect Ratio Microelectromechanical Components",
    abstract = "A deep reactive ion etch (DRIE) process for fabrication of high aspect ratio trenches has been developed. Trenches with aspect ratios exceeding 20 and vertical sidewalls with low roughness have been demonstrated. The process has successfully been used in the fabrication of silicon-on-insulator (SOI) released comb drive based resonators and tunable capacitors for MEMS applications. Brief characterizations of the devices are presented.",
    author = "S{\o}ren Jensen and Yalcinkaya, {Arda Deniz} and S. Jacobsen and T. Rasmussen and Rasmussen, {Frank Engel} and Ole Hansen",
    year = "2004",
    doi = "10.1088/0031-8949/2004/T114/047",
    language = "English",
    volume = "T114",
    pages = "188--192",
    journal = "Physica Scripta. Topical Issues",
    issn = "0281-1847",
    publisher = "IOP Publishing",

    }

    Deep Reactive Ion Etching for High Aspect Ratio Microelectromechanical Components. / Jensen, Søren; Yalcinkaya, Arda Deniz; Jacobsen, S.; Rasmussen, T.; Rasmussen, Frank Engel; Hansen, Ole.

    In: Physica Scripta. Topical Issues, Vol. T114, 2004, p. 188-192.

    Research output: Contribution to journalJournal articleResearchpeer-review

    TY - JOUR

    T1 - Deep Reactive Ion Etching for High Aspect Ratio Microelectromechanical Components

    AU - Jensen, Søren

    AU - Yalcinkaya, Arda Deniz

    AU - Jacobsen, S.

    AU - Rasmussen, T.

    AU - Rasmussen, Frank Engel

    AU - Hansen, Ole

    PY - 2004

    Y1 - 2004

    N2 - A deep reactive ion etch (DRIE) process for fabrication of high aspect ratio trenches has been developed. Trenches with aspect ratios exceeding 20 and vertical sidewalls with low roughness have been demonstrated. The process has successfully been used in the fabrication of silicon-on-insulator (SOI) released comb drive based resonators and tunable capacitors for MEMS applications. Brief characterizations of the devices are presented.

    AB - A deep reactive ion etch (DRIE) process for fabrication of high aspect ratio trenches has been developed. Trenches with aspect ratios exceeding 20 and vertical sidewalls with low roughness have been demonstrated. The process has successfully been used in the fabrication of silicon-on-insulator (SOI) released comb drive based resonators and tunable capacitors for MEMS applications. Brief characterizations of the devices are presented.

    U2 - 10.1088/0031-8949/2004/T114/047

    DO - 10.1088/0031-8949/2004/T114/047

    M3 - Journal article

    VL - T114

    SP - 188

    EP - 192

    JO - Physica Scripta. Topical Issues

    JF - Physica Scripta. Topical Issues

    SN - 0281-1847

    ER -