TY - JOUR
T1 - Decay Lengths for Diffusive Transport Activated by Andreev Reflections in Al/n-GaAs/Al Superconductor-Semiconductor-Superconductor Junctions
AU - Kutchinsky, Jonatan
AU - Taboryski, Rafael Jozef
AU - Clausen, Thomas
AU - Sørensen, Claus Birger
AU - Kristensen, Anders
AU - Lindelof, Poul Erik
AU - Hansen, Jørn Bindslev
AU - Jacobsen, Claus Schelde
AU - Skov, Johannes
N1 - Copyright (1997) American Physical Society.
PY - 1997
Y1 - 1997
N2 - In a highly doped GaAs semiconductor with superconducting contacts of Al, clear conductance peaks are observed at zero voltage bias and at V = +/-2 Delta/e, +/-Delta/e. The subharmonic energy gap structure originates from Andreev scattering with diffusive, but energy conserving, transport in the GaAs. The zero bias excess conductance is due to phase-coherent transport. Both effects are suppressed when the distance between the superconducting electrodes exceeds the inelastic diffusion length in the GaAs normal channel.
AB - In a highly doped GaAs semiconductor with superconducting contacts of Al, clear conductance peaks are observed at zero voltage bias and at V = +/-2 Delta/e, +/-Delta/e. The subharmonic energy gap structure originates from Andreev scattering with diffusive, but energy conserving, transport in the GaAs. The zero bias excess conductance is due to phase-coherent transport. Both effects are suppressed when the distance between the superconducting electrodes exceeds the inelastic diffusion length in the GaAs normal channel.
KW - ENERGY-GAP STRUCTURE
KW - CONDUCTANCE
KW - CONSTRICTIONS
U2 - 10.1103/PhysRevLett.78.931
DO - 10.1103/PhysRevLett.78.931
M3 - Journal article
SN - 0031-9007
VL - 78
SP - 931
EP - 934
JO - Physical Review Letters
JF - Physical Review Letters
IS - 5
ER -