In a highly doped GaAs semiconductor with superconducting contacts of Al, clear conductance peaks are observed at zero voltage bias and at V = +/-2 Delta/e, +/-Delta/e. The subharmonic energy gap structure originates from Andreev scattering with diffusive, but energy conserving, transport in the GaAs. The zero bias excess conductance is due to phase-coherent transport. Both effects are suppressed when the distance between the superconducting electrodes exceeds the inelastic diffusion length in the GaAs normal channel.
Copyright (1997) American Physical Society.
- ENERGY-GAP STRUCTURE