Decay Lengths for Diffusive Transport Activated by Andreev Reflections in Al/n-GaAs/Al Superconductor-Semiconductor-Superconductor Junctions

Jonatan Kutchinsky, Rafael Jozef Taboryski, Thomas Clausen, Claus Birger Sørensen, Anders Kristensen, Poul Erik Lindelof, Jørn Bindslev Hansen, Claus Schelde Jacobsen, Johannes Skov

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Abstract

In a highly doped GaAs semiconductor with superconducting contacts of Al, clear conductance peaks are observed at zero voltage bias and at V = +/-2 Delta/e, +/-Delta/e. The subharmonic energy gap structure originates from Andreev scattering with diffusive, but energy conserving, transport in the GaAs. The zero bias excess conductance is due to phase-coherent transport. Both effects are suppressed when the distance between the superconducting electrodes exceeds the inelastic diffusion length in the GaAs normal channel.
Original languageEnglish
JournalPhysical Review Letters
Volume78
Issue number5
Pages (from-to)931-934
ISSN0031-9007
DOIs
Publication statusPublished - 1997

Bibliographical note

Copyright (1997) American Physical Society.

Keywords

  • ENERGY-GAP STRUCTURE
  • CONDUCTANCE
  • CONSTRICTIONS

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