De-embedding and Modelling of pnp SiGe HBTs

Dzenan Hadziabdic, Chenhui Jiang, Tom Keinicke Johansen, G.G. Fischer, B. Heinemann, Viktor Krozer

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Abstract

In this work we present a direct parameter extraction procedure for SiGe pnp heterojunction bipolar transistor (HBT) large-signal and small-signal models. Test structure parasitics are removed from the measured small-signal parameters using an open-short de-embedding technique, improved to account for the distributed nature of the interconnect lines. Good agreement is achieved between the small-signal model of the HBT and the measurements. Parameters for the large-signal VBIC model are extracted based on multi-bias small-signal model extraction, leading to consistency between measured and modeled fBTB.
Original languageEnglish
Title of host publicationProceedings of the 2nd European Microwave Integrated Circuits Conference
PublisherIEEE
Publication date2007
Pages195-198
ISBN (Print)978-2-87487-002-6
DOIs
Publication statusPublished - 2007
Event2nd European Microwave Integrated Circuits Conference : EUMA'07 - Munich, Germany
Duration: 1 Jan 2007 → …

Conference

Conference2nd European Microwave Integrated Circuits Conference : EUMA'07
CityMunich, Germany
Period01/01/2007 → …

Bibliographical note

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Cite this

Hadziabdic, D., Jiang, C., Johansen, T. K., Fischer, G. G., Heinemann, B., & Krozer, V. (2007). De-embedding and Modelling of pnp SiGe HBTs. In Proceedings of the 2nd European Microwave Integrated Circuits Conference (pp. 195-198). IEEE. https://doi.org/10.1109/EMICC.2007.4412682