In this work we present a direct parameter extraction procedure for SiGe pnp heterojunction bipolar transistor (HBT) large-signal and small-signal models. Test structure parasitics are removed from the measured small-signal parameters using an open-short de-embedding technique, improved to account for the distributed nature of the interconnect lines. Good agreement is achieved between the small-signal model of the HBT and the measurements. Parameters for the large-signal VBIC model are extracted based on multi-bias small-signal model extraction, leading to consistency between measured and modeled fBTB.
|Title of host publication||Proceedings of the 2nd European Microwave Integrated Circuits Conference|
|Publication status||Published - 2007|
|Event||2nd European Microwave Integrated Circuits Conference : EUMA'07 - Munich, Germany|
Duration: 1 Jan 2007 → …
|Conference||2nd European Microwave Integrated Circuits Conference : EUMA'07|
|Period||01/01/2007 → …|