Customizable nanotweezers for manipulation of free-standing nanostructures

Peter Bøggild, Torben Mikael Hansen, Kristian Mølhave, Anders Hyldgård, M. O. Jensen, Jacob Richter, Lars Montelius, Francois Grey

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Abstract

We present a novel nanotweezer device for manipulation and measurement of free-standing nanostructures, where the shape of the tweezer tips can be customized for the application. Electrostatic actuators with submicron interelectrode spacings are fabricated on a batch level using silicon microfabrication techniques. The actuators are capable of opening and closing with respect to the neutral position, and the full range of actuation exceeds 330 nm. The nanotweezer tips are fabricated using electron beam induced deposition; an electron beam of a scanning electron microscope is focused at the ends of the cantilevers, leading to the formation of 40-100 nm diameter carbon-based tips. Careful alignment of the substrate and the beam, as well as proper selection of growth mode, results in converging tips forming nanogaps down to 20 nm. The nanotweezers can be metallized to be used for electrical measurements of nanostructures.
Original languageEnglish
Title of host publicationProceedings of The 2001 1st IEEE Conference on Nanotechnology
PublisherIEEE
Publication date2001
Pages87-92
ISBN (Print)0-7803-7215-8
DOIs
Publication statusPublished - 2001
Event1st IEEE Conference on Nanotechnology - Maui, United States
Duration: 30 Oct 200130 Oct 2001
Conference number: 1
https://ieeexplore.ieee.org/xpl/conhome/7637/proceeding

Conference

Conference1st IEEE Conference on Nanotechnology
Number1
Country/TerritoryUnited States
CityMaui
Period30/10/200130/10/2001
Internet address

Bibliographical note

Copyright: 2000 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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