Current Spreading Layer with High Transparency and Conductivity for near-ultraviolet light emitting diodes

Research output: Contribution to conferencePaper – Annual report year: 2017Researchpeer-review


View graph of relations

Transparent conductive aluminum-doped zinc oxide (AZO) layer was deposited on GaN-based near-ultraviolet (NUV) light emitting epitaxial wafers as current spreading layer by a sputtering process. Efforts were made to improve the electrical properties of AZO in order to produce ohmic contact.
Original languageEnglish
Publication date2017
Number of pages1
Publication statusPublished - 2017
Event5th International workshop on LEDs and solar application - Technical University of Denmark, Kgs. Lyngby, Denmark
Duration: 13 Sep 201714 Sep 2017


Conference5th International workshop on LEDs and solar application
LocationTechnical University of Denmark
CityKgs. Lyngby

    Research areas

  • Near ultraviolet light emitting diodes, Transparent conductive current spreading layer, Aluminum-doped zinc oxide

Download statistics

No data available

ID: 140196216