Current Spreading Layer with High Transparency and Conductivity for near-ultraviolet light emitting diodes

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    Abstract

    Transparent conductive aluminum-doped zinc oxide (AZO) layer was deposited on GaN-based near-ultraviolet (NUV) light emitting epitaxial wafers as current spreading layer by a sputtering process. Efforts were made to improve the electrical properties of AZO in order to produce ohmic contact.
    Original languageEnglish
    Publication date2017
    Number of pages1
    Publication statusPublished - 2017
    Event5th International workshop on LEDs and solar application - Technical University of Denmark, Kgs. Lyngby, Denmark
    Duration: 13 Sept 201714 Sept 2017
    Conference number: 5

    Conference

    Conference5th International workshop on LEDs and solar application
    Number5
    LocationTechnical University of Denmark
    Country/TerritoryDenmark
    CityKgs. Lyngby
    Period13/09/201714/09/2017

    Keywords

    • Near ultraviolet light emitting diodes
    • Transparent conductive current spreading layer
    • Aluminum-doped zinc oxide

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