Current Spreading Layer with High Transparency and Conductivity for near-ultraviolet light emitting diodes

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Abstract

Transparent conductive aluminum-doped zinc oxide (AZO) layer was deposited on GaN-based near-ultraviolet (NUV) light emitting epitaxial wafers as current spreading layer by a sputtering process. Efforts were made to improve the electrical properties of AZO in order to produce ohmic contact.
Original languageEnglish
Publication date2017
Number of pages1
Publication statusPublished - 2017
Event5th International workshop on LEDs and solar application - Technical University of Denmark, Kgs. Lyngby, Denmark
Duration: 13 Sep 201714 Sep 2017

Conference

Conference5th International workshop on LEDs and solar application
LocationTechnical University of Denmark
CountryDenmark
CityKgs. Lyngby
Period13/09/201714/09/2017

Keywords

  • Near ultraviolet light emitting diodes
  • Transparent conductive current spreading layer
  • Aluminum-doped zinc oxide

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