Abstract
Transparent conductive aluminum-doped zinc oxide (AZO) layer was deposited on GaN-based near-ultraviolet (NUV) light emitting epitaxial wafers as current spreading layer by a sputtering process. Efforts were made to improve the electrical properties of AZO in order to produce ohmic contact.
| Original language | English |
|---|---|
| Publication date | 2017 |
| Number of pages | 1 |
| Publication status | Published - 2017 |
| Event | 5th International workshop on LEDs and solar application - Technical University of Denmark, Kgs. Lyngby, Denmark Duration: 13 Sep 2017 → 14 Sep 2017 |
Conference
| Conference | 5th International workshop on LEDs and solar application |
|---|---|
| Location | Technical University of Denmark |
| Country/Territory | Denmark |
| City | Kgs. Lyngby |
| Period | 13/09/2017 → 14/09/2017 |
Keywords
- Near ultraviolet light emitting diodes
- Transparent conductive current spreading layer
- Aluminum-doped zinc oxide