Abstract
Transparent conductive aluminum-doped zinc oxide (AZO) layer was deposited on GaN-based near-ultraviolet (NUV) light emitting epitaxial wafers as current spreading layer by a sputtering process. Efforts were made to improve the electrical properties of AZO in order to produce ohmic contact.
Original language | English |
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Publication date | 2017 |
Number of pages | 1 |
Publication status | Published - 2017 |
Event | 5th International workshop on LEDs and solar application - Technical University of Denmark, Kgs. Lyngby, Denmark Duration: 13 Sep 2017 → 14 Sep 2017 |
Conference
Conference | 5th International workshop on LEDs and solar application |
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Location | Technical University of Denmark |
Country | Denmark |
City | Kgs. Lyngby |
Period | 13/09/2017 → 14/09/2017 |
Keywords
- Near ultraviolet light emitting diodes
- Transparent conductive current spreading layer
- Aluminum-doped zinc oxide