Crystallographic dependence of the lateral undercut wet etch rate of Al0.5In0.5P in diluted HCl for III-V sacrificial release

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Abstract

The authors investigated the use of InAlP as a sacrificial layer lattice-matched to GaAs when diluted hydrochloric acid is used for sacrificial etching. They show that InAlP can be used to fabricate submicrometer air gaps in micro-opto-electro-mechanical systems and that a selectivity toward GaAs larger than 500 is achieved. This selectivity enables fabrication control of the nanometer-size structures required in photonic crystal and high-index contrast subwavelength grating structures. The crystallographic dependence of the lateral etch rate in InAlP is shown to be symmetric around the 〈110〉 directions where an etch rate of 0.5 μm/min is obtained at 22 °C in HCl:2H2O. Since the etch rate in the 〈100〉 directions exceeds by ten times that of the 〈110〉 directions, InAlP may be used in sacrificial release of high-aspect ratio structures. Free-hanging structures with length to air-gap aspect ratios above 600 are demonstrated by use of critical point drying following the sacrificial etch.
Original languageEnglish
JournalJournal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures
Volume31
Issue number1
Pages (from-to)011209
Number of pages4
ISSN1071-1023
DOIs
Publication statusPublished - 2013

Bibliographical note

Copyright (2013) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Vac. Sci. Technol. B 31, 011209 (2013) and may be found at http://avspublications.org/jvstb/resource/1/jvtbd9/v31/i1/p011209_s1.

Keywords

  • indium compounds

Cite this

@article{051debb01b034c4791fd64a91584d72d,
title = "Crystallographic dependence of the lateral undercut wet etch rate of Al0.5In0.5P in diluted HCl for III-V sacrificial release",
abstract = "The authors investigated the use of InAlP as a sacrificial layer lattice-matched to GaAs when diluted hydrochloric acid is used for sacrificial etching. They show that InAlP can be used to fabricate submicrometer air gaps in micro-opto-electro-mechanical systems and that a selectivity toward GaAs larger than 500 is achieved. This selectivity enables fabrication control of the nanometer-size structures required in photonic crystal and high-index contrast subwavelength grating structures. The crystallographic dependence of the lateral etch rate in InAlP is shown to be symmetric around the 〈110〉 directions where an etch rate of 0.5 μm/min is obtained at 22 °C in HCl:2H2O. Since the etch rate in the 〈100〉 directions exceeds by ten times that of the 〈110〉 directions, InAlP may be used in sacrificial release of high-aspect ratio structures. Free-hanging structures with length to air-gap aspect ratios above 600 are demonstrated by use of critical point drying following the sacrificial etch.",
keywords = "indium compounds",
author = "Thor Ansb{\ae}k and Elizaveta Semenova and Kresten Yvind and Ole Hansen",
note = "Copyright (2013) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Vac. Sci. Technol. B 31, 011209 (2013) and may be found at http://avspublications.org/jvstb/resource/1/jvtbd9/v31/i1/p011209_s1.",
year = "2013",
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language = "English",
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pages = "011209",
journal = "Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures",
issn = "1071-1023",
publisher = "American Institute of Physics",
number = "1",

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TY - JOUR

T1 - Crystallographic dependence of the lateral undercut wet etch rate of Al0.5In0.5P in diluted HCl for III-V sacrificial release

AU - Ansbæk, Thor

AU - Semenova, Elizaveta

AU - Yvind, Kresten

AU - Hansen, Ole

N1 - Copyright (2013) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Vac. Sci. Technol. B 31, 011209 (2013) and may be found at http://avspublications.org/jvstb/resource/1/jvtbd9/v31/i1/p011209_s1.

PY - 2013

Y1 - 2013

N2 - The authors investigated the use of InAlP as a sacrificial layer lattice-matched to GaAs when diluted hydrochloric acid is used for sacrificial etching. They show that InAlP can be used to fabricate submicrometer air gaps in micro-opto-electro-mechanical systems and that a selectivity toward GaAs larger than 500 is achieved. This selectivity enables fabrication control of the nanometer-size structures required in photonic crystal and high-index contrast subwavelength grating structures. The crystallographic dependence of the lateral etch rate in InAlP is shown to be symmetric around the 〈110〉 directions where an etch rate of 0.5 μm/min is obtained at 22 °C in HCl:2H2O. Since the etch rate in the 〈100〉 directions exceeds by ten times that of the 〈110〉 directions, InAlP may be used in sacrificial release of high-aspect ratio structures. Free-hanging structures with length to air-gap aspect ratios above 600 are demonstrated by use of critical point drying following the sacrificial etch.

AB - The authors investigated the use of InAlP as a sacrificial layer lattice-matched to GaAs when diluted hydrochloric acid is used for sacrificial etching. They show that InAlP can be used to fabricate submicrometer air gaps in micro-opto-electro-mechanical systems and that a selectivity toward GaAs larger than 500 is achieved. This selectivity enables fabrication control of the nanometer-size structures required in photonic crystal and high-index contrast subwavelength grating structures. The crystallographic dependence of the lateral etch rate in InAlP is shown to be symmetric around the 〈110〉 directions where an etch rate of 0.5 μm/min is obtained at 22 °C in HCl:2H2O. Since the etch rate in the 〈100〉 directions exceeds by ten times that of the 〈110〉 directions, InAlP may be used in sacrificial release of high-aspect ratio structures. Free-hanging structures with length to air-gap aspect ratios above 600 are demonstrated by use of critical point drying following the sacrificial etch.

KW - indium compounds

U2 - 10.1116/1.4771971

DO - 10.1116/1.4771971

M3 - Journal article

VL - 31

SP - 011209

JO - Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures

SN - 1071-1023

IS - 1

ER -