Crystal orientation effects on the piezoelectric field of strained zinc-blende quantum-well structures

Lars Duggen, Morten Willatzen, Benny Lassen

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

A three-layered zinc-blende quantum-well structure is analyzed subject to both static and dynamic conditions for different crystal growth directions taking into account piezoelectric effects and lattice mismatch. It is found that the strain component S-zz in the quantum-well region strongly depends on the crystal growth direction and that a piezoelectric strain contribution exists in zinc blende as in wurtzite, albeit smaller. It is also found in the absence of loss effects that resonance frequencies, giving large strains in the structure, depend strongly on the crystal growth direction. Due to the higher symmetry of the zinc-blende structure, we find in a one-dimensional model that piezoelectric effects do not affect strain values for zinc-blende structures grown along the [001] direction in contrast to the corresponding wurtzite result. However, zinc-blende structures grown along a general crystal direction show important changes in strain and the electric distribution due to piezoelectric effects. The findings indicate the quantitative importance of a fully coupled model even for zinc blende, in particular when discussing electronic band structure and optoelectronic properties.
Original languageEnglish
JournalPhysical Review B Condensed Matter
Volume78
Issue number20
Pages (from-to)205323
Number of pages6
ISSN0163-1829
DOIs
Publication statusPublished - 2008
Externally publishedYes

Keywords

  • Physcis
  • Effect transistors
  • Gan
  • Parameters
  • Wurtzite

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