Abstract
| Original language | English |
|---|---|
| Journal | Optical Materials Express |
| Volume | 9 |
| Issue number | 5 |
| Pages (from-to) | 2117-2127 |
| ISSN | 2159-3930 |
| DOIs | |
| Publication status | Published - 2019 |
Cite this
}
Cryogenic characterization of titanium nitride thin films. / Vertchenko, Larissa; Leandro, Lorenzo; Shkondin, Evgeniy; Takayama, Osamu; Bondarev, Igor V.; Akopian, Nika; Lavrinenko, Andrei V.
In: Optical Materials Express, Vol. 9, No. 5, 2019, p. 2117-2127.Research output: Contribution to journal › Journal article › Research › peer-review
TY - JOUR
T1 - Cryogenic characterization of titanium nitride thin films
AU - Vertchenko, Larissa
AU - Leandro, Lorenzo
AU - Shkondin, Evgeniy
AU - Takayama, Osamu
AU - Bondarev, Igor V.
AU - Akopian, Nika
AU - Lavrinenko, Andrei V.
PY - 2019
Y1 - 2019
N2 - It is well known that noble metals are not compatible with silicon fabrication processing due to their low melting point, and that their plasmonic behaviour suffers from the material losses at visible wavelengths. As an alternative, titanium nitride has been highly investigated in order to overcome these challenges. High temperature characterization of TiN films has been performed, showing its CMOS compatibility; however, information on intrinsic losses at lower temperatures is still lacking. Here we experimentally investigate the optical properties of a 100 nm TiN film under low temperatures down to 1.5 K. From the reflection measurements we retrieve the dielectric constant and analyze plasmonic applications possibilities.
AB - It is well known that noble metals are not compatible with silicon fabrication processing due to their low melting point, and that their plasmonic behaviour suffers from the material losses at visible wavelengths. As an alternative, titanium nitride has been highly investigated in order to overcome these challenges. High temperature characterization of TiN films has been performed, showing its CMOS compatibility; however, information on intrinsic losses at lower temperatures is still lacking. Here we experimentally investigate the optical properties of a 100 nm TiN film under low temperatures down to 1.5 K. From the reflection measurements we retrieve the dielectric constant and analyze plasmonic applications possibilities.
U2 - 10.1364/OME.9.002117
DO - 10.1364/OME.9.002117
M3 - Journal article
VL - 9
SP - 2117
EP - 2127
JO - Optical Materials Express
JF - Optical Materials Express
SN - 2159-3930
IS - 5
ER -