Cryogenic characterization of titanium nitride thin films

Larissa Vertchenko*, Lorenzo Leandro, Evgeniy Shkondin, Osamu Takayama, Igor V. Bondarev, Nika Akopian, Andrei V. Lavrinenko

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

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Abstract

It is well known that noble metals are not compatible with silicon fabrication processing due to their low melting point, and that their plasmonic behaviour suffers from the material losses at visible wavelengths. As an alternative, titanium nitride has been highly investigated in order to overcome these challenges. High temperature characterization of TiN films has been performed, showing its CMOS compatibility; however, information on intrinsic losses at lower temperatures is still lacking. Here we experimentally investigate the optical properties of a 100 nm TiN film under low temperatures down to 1.5 K. From the reflection measurements we retrieve the dielectric constant and analyze plasmonic applications possibilities.
Original languageEnglish
JournalOptical Materials Express
Volume9
Issue number5
Pages (from-to)2117-2127
ISSN2159-3930
DOIs
Publication statusPublished - 2019

Cite this

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title = "Cryogenic characterization of titanium nitride thin films",
abstract = "It is well known that noble metals are not compatible with silicon fabrication processing due to their low melting point, and that their plasmonic behaviour suffers from the material losses at visible wavelengths. As an alternative, titanium nitride has been highly investigated in order to overcome these challenges. High temperature characterization of TiN films has been performed, showing its CMOS compatibility; however, information on intrinsic losses at lower temperatures is still lacking. Here we experimentally investigate the optical properties of a 100 nm TiN film under low temperatures down to 1.5 K. From the reflection measurements we retrieve the dielectric constant and analyze plasmonic applications possibilities.",
author = "Larissa Vertchenko and Lorenzo Leandro and Evgeniy Shkondin and Osamu Takayama and Bondarev, {Igor V.} and Nika Akopian and Lavrinenko, {Andrei V.}",
year = "2019",
doi = "10.1364/OME.9.002117",
language = "English",
volume = "9",
pages = "2117--2127",
journal = "Optical Materials Express",
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publisher = "Optical Society of America",
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}

Cryogenic characterization of titanium nitride thin films. / Vertchenko, Larissa; Leandro, Lorenzo; Shkondin, Evgeniy; Takayama, Osamu; Bondarev, Igor V.; Akopian, Nika; Lavrinenko, Andrei V.

In: Optical Materials Express, Vol. 9, No. 5, 2019, p. 2117-2127.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - Cryogenic characterization of titanium nitride thin films

AU - Vertchenko, Larissa

AU - Leandro, Lorenzo

AU - Shkondin, Evgeniy

AU - Takayama, Osamu

AU - Bondarev, Igor V.

AU - Akopian, Nika

AU - Lavrinenko, Andrei V.

PY - 2019

Y1 - 2019

N2 - It is well known that noble metals are not compatible with silicon fabrication processing due to their low melting point, and that their plasmonic behaviour suffers from the material losses at visible wavelengths. As an alternative, titanium nitride has been highly investigated in order to overcome these challenges. High temperature characterization of TiN films has been performed, showing its CMOS compatibility; however, information on intrinsic losses at lower temperatures is still lacking. Here we experimentally investigate the optical properties of a 100 nm TiN film under low temperatures down to 1.5 K. From the reflection measurements we retrieve the dielectric constant and analyze plasmonic applications possibilities.

AB - It is well known that noble metals are not compatible with silicon fabrication processing due to their low melting point, and that their plasmonic behaviour suffers from the material losses at visible wavelengths. As an alternative, titanium nitride has been highly investigated in order to overcome these challenges. High temperature characterization of TiN films has been performed, showing its CMOS compatibility; however, information on intrinsic losses at lower temperatures is still lacking. Here we experimentally investigate the optical properties of a 100 nm TiN film under low temperatures down to 1.5 K. From the reflection measurements we retrieve the dielectric constant and analyze plasmonic applications possibilities.

U2 - 10.1364/OME.9.002117

DO - 10.1364/OME.9.002117

M3 - Journal article

VL - 9

SP - 2117

EP - 2127

JO - Optical Materials Express

JF - Optical Materials Express

SN - 2159-3930

IS - 5

ER -