Crossover of angular dependent magnetoresistance with the metal-insulator transition in colossal magnetoresistive manganite films

Yunzhong Chen, J.R. Sun, T.Y. Zhao, J. Wang, Z.H. Wang, B.G. Shen, Nini Pryds

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    The temperature and magnetic field dependence of angular dependent magnetoresistance (AMR) along two orthogonal directions ([100] and [01]) was investigated in a charge-orbital-ordered Sm0.5Ca0.5MnO3 (SCMO) film grown on (011)-oriented SrTiO3 substrates. A dramatic decrease of AMR magnitude in both directions was observed with the appearance of magnetic-field-induced metal-insulator transition, which further led to a sign crossover in the AMR effect. The AMR crossover may give a direct evidence of the drastic modification of electronic structure or possible orbital reconstruction with the magnetic-destruction of charge/orbital ordering in SCMO films. ©2009 American Institute of Physics
    Original languageEnglish
    JournalApplied Physics Letters
    Issue number13
    Pages (from-to)132506
    Publication statusPublished - 2009

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    Copyright (2009) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.


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