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Creation of High Mobility Two-Dimensional Electron Gases via Strain Induced Polarization at an Otherwise Nonpolar Complex Oxide Interface

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Abstract

The discovery of two-dimensional electron gases (2DEGs) in SrTiO3-based heterostructures provides new opportunities for nanoelectronics. Herein, we create a new type of oxide 2DEG by the epitaxial-strain-induced polarization at an otherwise nonpolar perovskite-type interface of CaZrO3/SrTiO3. Remarkably, this heterointerface is atomically sharp and exhibits a high electron mobility exceeding 60 000 cm2 V−1 s−1 at low temperatures. The 2DEG carrier density exhibits a critical dependence on the film thickness, in good agreement with the polarization induced 2DEG scheme.
Original languageEnglish
JournalNano Letters
Volume15
Issue number3
Pages (from-to)1849–1854
ISSN1530-6984
DOIs
Publication statusPublished - 2015

Keywords

  • Complex oxide interfaces
  • Oxide electronics
  • Two-dimensional electron gases
  • Strain induced polarization

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