Cobalt oxide films were grown by Pulsed Injection Metal Organic Chemical Vapour Deposition (PI-MOCVD) using Co(acac)(3) (acac=acetylacetonate) precursor dissolved in toluene. The structure, morphology and growth rate of the layers deposited on silicon substrates were studied as a function of deposition temperature. Pure Co3O4 spinel structure was found for deposition temperatures ranging from 360 to 540 degreesC. The optimum experimental parameters to prepare dense layers with a high growth rate were determined and used to prepare corrosion protective coatings for Fe-22Cr metallic interconnects, to be used in Intermediate Temperature Solid Oxide Fuel Cells. (C) 2004 Elsevier B.V. All rights reserved.
Burriel, M., Garcia, G., Santiso, J., Hansson, A. N., Linderoth, S., & Figueras, A. (2005). Co3O4 protective coatings prepared by Pulsed Injection Metal Organic Chemical Vapour Deposition. Thin Solid Films, 473(1), 98-103. https://doi.org/10.1016/j.tsf.2004.07.081