Co3O4 protective coatings prepared by Pulsed Injection Metal Organic Chemical Vapour Deposition

M. Burriel, G. Garcia, J. Santiso, A.N. Hansson, Søren Linderoth, A. Figueras

    Research output: Contribution to journalJournal articleResearchpeer-review


    Cobalt oxide films were grown by Pulsed Injection Metal Organic Chemical Vapour Deposition (PI-MOCVD) using Co(acac)(3) (acac=acetylacetonate) precursor dissolved in toluene. The structure, morphology and growth rate of the layers deposited on silicon substrates were studied as a function of deposition temperature. Pure Co3O4 spinel structure was found for deposition temperatures ranging from 360 to 540 degreesC. The optimum experimental parameters to prepare dense layers with a high growth rate were determined and used to prepare corrosion protective coatings for Fe-22Cr metallic interconnects, to be used in Intermediate Temperature Solid Oxide Fuel Cells. (C) 2004 Elsevier B.V. All rights reserved.
    Original languageDanish
    JournalThin Solid Films
    Issue number1
    Pages (from-to)98-103
    Publication statusPublished - 2005

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