Copper Oxidation through Nucleation Sites of Chemical Vapor Deposited Graphene

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Abstract

We investigate the nucleation defect-triggered oxidation of Cu covered by CVD graphene during postannealing in air. The results reveal that different growth conditions may induce imperfect nucleation of graphene, and cause creation of defects near the nucleation point such as pin holes and amorphous carbon. These defects would serve as a pathway for the diffusion of 02 during thermal annealing, allowing oxidation of Cu to progress gradually from the nucleation center toward the growth edge. The oxidation process follows the graphene morphology closely; the shape of the oxidized area of Cu has a striking resemblance to that of the graphene flakes. Our work demonstrates that inferior graphene nucleation in CVD processes can compromise the oxidation resistance of a graphene-coated Cu substrate, and indirectly reveal the structure and integrity of graphene, which is of fundamental importance for the quality monitoring and control of graphene growth, for understanding the mechanisms of graphene nucleation and growth, and has implications for graphene's use in electronic and passivation applications.
Original languageEnglish
JournalChemistry of Materials
Volume28
Issue number11
Pages (from-to)3789-3795
Number of pages7
ISSN0897-4756
DOIs
Publication statusPublished - 2016

Cite this

@article{37fa136acb494ccfa89bcddf3f5205bb,
title = "Copper Oxidation through Nucleation Sites of Chemical Vapor Deposited Graphene",
abstract = "We investigate the nucleation defect-triggered oxidation of Cu covered by CVD graphene during postannealing in air. The results reveal that different growth conditions may induce imperfect nucleation of graphene, and cause creation of defects near the nucleation point such as pin holes and amorphous carbon. These defects would serve as a pathway for the diffusion of 02 during thermal annealing, allowing oxidation of Cu to progress gradually from the nucleation center toward the growth edge. The oxidation process follows the graphene morphology closely; the shape of the oxidized area of Cu has a striking resemblance to that of the graphene flakes. Our work demonstrates that inferior graphene nucleation in CVD processes can compromise the oxidation resistance of a graphene-coated Cu substrate, and indirectly reveal the structure and integrity of graphene, which is of fundamental importance for the quality monitoring and control of graphene growth, for understanding the mechanisms of graphene nucleation and growth, and has implications for graphene's use in electronic and passivation applications.",
author = "Birong Luo and Whelan, {Patrick Rebsdorf} and Abhay Shivayogimath and David Mackenzie and Peter B{\o}ggild and Tim Booth",
year = "2016",
doi = "10.1021/acs.chemmater.6b00752",
language = "English",
volume = "28",
pages = "3789--3795",
journal = "Chemistry of Materials",
issn = "0897-4756",
publisher = "American Chemical Society",
number = "11",

}

Copper Oxidation through Nucleation Sites of Chemical Vapor Deposited Graphene. / Luo, Birong; Whelan, Patrick Rebsdorf; Shivayogimath, Abhay; Mackenzie, David; Bøggild, Peter; Booth, Tim .

In: Chemistry of Materials, Vol. 28, No. 11, 2016, p. 3789-3795.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - Copper Oxidation through Nucleation Sites of Chemical Vapor Deposited Graphene

AU - Luo, Birong

AU - Whelan, Patrick Rebsdorf

AU - Shivayogimath, Abhay

AU - Mackenzie, David

AU - Bøggild, Peter

AU - Booth, Tim

PY - 2016

Y1 - 2016

N2 - We investigate the nucleation defect-triggered oxidation of Cu covered by CVD graphene during postannealing in air. The results reveal that different growth conditions may induce imperfect nucleation of graphene, and cause creation of defects near the nucleation point such as pin holes and amorphous carbon. These defects would serve as a pathway for the diffusion of 02 during thermal annealing, allowing oxidation of Cu to progress gradually from the nucleation center toward the growth edge. The oxidation process follows the graphene morphology closely; the shape of the oxidized area of Cu has a striking resemblance to that of the graphene flakes. Our work demonstrates that inferior graphene nucleation in CVD processes can compromise the oxidation resistance of a graphene-coated Cu substrate, and indirectly reveal the structure and integrity of graphene, which is of fundamental importance for the quality monitoring and control of graphene growth, for understanding the mechanisms of graphene nucleation and growth, and has implications for graphene's use in electronic and passivation applications.

AB - We investigate the nucleation defect-triggered oxidation of Cu covered by CVD graphene during postannealing in air. The results reveal that different growth conditions may induce imperfect nucleation of graphene, and cause creation of defects near the nucleation point such as pin holes and amorphous carbon. These defects would serve as a pathway for the diffusion of 02 during thermal annealing, allowing oxidation of Cu to progress gradually from the nucleation center toward the growth edge. The oxidation process follows the graphene morphology closely; the shape of the oxidized area of Cu has a striking resemblance to that of the graphene flakes. Our work demonstrates that inferior graphene nucleation in CVD processes can compromise the oxidation resistance of a graphene-coated Cu substrate, and indirectly reveal the structure and integrity of graphene, which is of fundamental importance for the quality monitoring and control of graphene growth, for understanding the mechanisms of graphene nucleation and growth, and has implications for graphene's use in electronic and passivation applications.

U2 - 10.1021/acs.chemmater.6b00752

DO - 10.1021/acs.chemmater.6b00752

M3 - Journal article

VL - 28

SP - 3789

EP - 3795

JO - Chemistry of Materials

JF - Chemistry of Materials

SN - 0897-4756

IS - 11

ER -