Conventional and 360 degree electron tomography of a micro-crystalline silicon solar cell

Martial Duchamp, Amuthan Ramar, András Kovács, Takeshi Kasama, F. -J. Haug, S. B. Newcomb, C. Ballif, Rafal E. Dunin-Borkowski

    Research output: Contribution to journalConference articleResearchpeer-review

    Abstract

    Bright-field (BF) and annular dark-field (ADF) electron tomography in the transmission electron microscope (TEM) are used to characterize elongated porous regions or cracks (simply referred to as cracks thereafter) in micro-crystalline silicon (μc-Si:H) solar cell. The limitations of inferring the 3D geometry of a crack from a tilt series of images acquired from 100-nm-thick focused ion beam (FTB) milled TEM specimen are discussed. In an attempt to maximize the specimen tilt range and to reduce the effects of diffraction and phase contrast on the reconstruction, both BF and ADF electron tomography are used to acquire 360° tilt series of images from a FIB-prepared needle-shaped μc-Si:H specimen.
    Original languageEnglish
    Book seriesJournal of Physics: Conference Series
    Volume326
    Issue number1
    Pages (from-to)012057
    ISSN1742-6588
    DOIs
    Publication statusPublished - 2011
    Event17th International Conference on Microscopy of Semiconducting Materials - University of Cambridge, Cambridge, United Kingdom
    Duration: 4 Apr 20117 Apr 2011
    Conference number: 17

    Conference

    Conference17th International Conference on Microscopy of Semiconducting Materials
    Number17
    LocationUniversity of Cambridge
    Country/TerritoryUnited Kingdom
    CityCambridge
    Period04/04/201107/04/2011

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