Controlling the Size and Density of Silicon Nanostructures by Incorporation of Nitrogen

Wolff-Ragnar Kiebach, Zhenrui Yu, Mariano Aceves-Mijares, Jinhui Du, Dongcai Bian, Rosa Lopez-Estopier, Jesus Carrillo-Lopez, Gabriel Juarez-Diaz, Javier Martinez Juarez

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

Si nanostructures are prepared by thermal annealing of silicon rich oxide (SRO) which is deposited using low pressure (LP) CVD. X-ray diffraction (XRD), Raman spectroscopy, infrared (IR) spectroscopy, and transmission electron microscopy (TEM) are used to characterize the structure of the Si nanocrystals and nanoislands. The density, crystallinity, and size of the Si nanoislands and Si nanocrystals can be controlled by the amount of nitrogen hosted in the SRO. The Si and SiO2 phase separation of the SRO during the annealing process is hindered by the incorporation of nitrogen.
Original languageEnglish
JournalCHEMICAL VAPOR DEPOSITION
Volume14
Issue number11-12
Pages (from-to)353-357
ISSN0948-1907
DOIs
Publication statusPublished - 2008
Externally publishedYes

Cite this

Kiebach, W-R., Yu, Z., Aceves-Mijares, M., Du, J., Bian, D., Lopez-Estopier, R., ... Martinez Juarez, J. (2008). Controlling the Size and Density of Silicon Nanostructures by Incorporation of Nitrogen. CHEMICAL VAPOR DEPOSITION, 14(11-12), 353-357. https://doi.org/10.1002/cvde.200806711