Si nanostructures are prepared by thermal annealing of silicon rich oxide (SRO) which is deposited using low pressure (LP) CVD. X-ray diffraction (XRD), Raman spectroscopy, infrared (IR) spectroscopy, and transmission electron microscopy (TEM) are used to characterize the structure of the Si nanocrystals and nanoislands. The density, crystallinity, and size of the Si nanoislands and Si nanocrystals can be controlled by the amount of nitrogen hosted in the SRO. The Si and SiO2 phase separation of the SRO during the annealing process is hindered by the incorporation of nitrogen.
, Yu, Z., Aceves-Mijares, M., Du, J., Bian, D., Lopez-Estopier, R., ... Martinez Juarez, J. (2008). Controlling the Size and Density of Silicon Nanostructures by Incorporation of Nitrogen
. CHEMICAL VAPOR DEPOSITION
(11-12), 353-357. https://doi.org/10.1002/cvde.200806711