TY - JOUR
T1 - Controlling the Size and Density of Silicon Nanostructures by Incorporation of Nitrogen
AU - Kiebach, Wolff-Ragnar
AU - Yu, Zhenrui
AU - Aceves-Mijares, Mariano
AU - Du, Jinhui
AU - Bian, Dongcai
AU - Lopez-Estopier, Rosa
AU - Carrillo-Lopez, Jesus
AU - Juarez-Diaz, Gabriel
AU - Martinez Juarez, Javier
PY - 2008
Y1 - 2008
N2 - Si nanostructures are prepared by thermal annealing of silicon rich oxide (SRO) which is deposited using low pressure (LP) CVD. X-ray diffraction (XRD), Raman spectroscopy, infrared (IR) spectroscopy, and transmission electron microscopy (TEM) are used to characterize the structure of the Si nanocrystals and nanoislands. The density, crystallinity, and size of the Si nanoislands and Si nanocrystals can be controlled by the amount of nitrogen hosted in the SRO. The Si and SiO2 phase separation of the SRO during the annealing process is hindered by the incorporation of nitrogen.
AB - Si nanostructures are prepared by thermal annealing of silicon rich oxide (SRO) which is deposited using low pressure (LP) CVD. X-ray diffraction (XRD), Raman spectroscopy, infrared (IR) spectroscopy, and transmission electron microscopy (TEM) are used to characterize the structure of the Si nanocrystals and nanoislands. The density, crystallinity, and size of the Si nanoislands and Si nanocrystals can be controlled by the amount of nitrogen hosted in the SRO. The Si and SiO2 phase separation of the SRO during the annealing process is hindered by the incorporation of nitrogen.
U2 - 10.1002/cvde.200806711
DO - 10.1002/cvde.200806711
M3 - Journal article
VL - 14
SP - 353
EP - 357
JO - Chemical Vapor Deposition
JF - Chemical Vapor Deposition
SN - 0948-1907
IS - 11-12
ER -