Controlling the Size and Density of Silicon Nanostructures by Incorporation of Nitrogen

Wolff-Ragnar Kiebach; Zhenrui Yu; Mariano Aceves-Mijares; Jinhui Du; Dongcai Bian; Rosa Lopez-Estopier; Jesus Carrillo-Lopez; Gabriel Juarez-Diaz; Javier Martinez Juarez

doi:10.1002/cvde.200806711

Controlling the Size and Density of Silicon Nanostructures by Incorporation of Nitrogen

Wolff-Ragnar Kiebach, Zhenrui Yu, Mariano Aceves-Mijares, Jinhui Du, Dongcai Bian, Rosa Lopez-Estopier, Jesus Carrillo-Lopez, Gabriel Juarez-Diaz, Javier Martinez Juarez

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

Si nanostructures are prepared by thermal annealing of silicon rich oxide (SRO) which is deposited using low pressure (LP) CVD. X-ray diffraction (XRD), Raman spectroscopy, infrared (IR) spectroscopy, and transmission electron microscopy (TEM) are used to characterize the structure of the Si nanocrystals and nanoislands. The density, crystallinity, and size of the Si nanoislands and Si nanocrystals can be controlled by the amount of nitrogen hosted in the SRO. The Si and SiO2 phase separation of the SRO during the annealing process is hindered by the incorporation of nitrogen.

Original language	English
Journal	CHEMICAL VAPOR DEPOSITION
Volume	14
Issue number	11-12
Pages (from-to)	353-357
ISSN	0948-1907
DOIs	https://doi.org/10.1002/cvde.200806711
Publication status	Published - 2008
Externally published	Yes

Cite this

Kiebach, W-R., Yu, Z., Aceves-Mijares, M., Du, J., Bian, D., Lopez-Estopier, R., ... Martinez Juarez, J. (2008). Controlling the Size and Density of Silicon Nanostructures by Incorporation of Nitrogen. CHEMICAL VAPOR DEPOSITION, 14(11-12), 353-357. https://doi.org/10.1002/cvde.200806711

@article{d50e9ef81c93434fad659b733e02a99b,

title = "Controlling the Size and Density of Silicon Nanostructures by Incorporation of Nitrogen",

abstract = "Si nanostructures are prepared by thermal annealing of silicon rich oxide (SRO) which is deposited using low pressure (LP) CVD. X-ray diffraction (XRD), Raman spectroscopy, infrared (IR) spectroscopy, and transmission electron microscopy (TEM) are used to characterize the structure of the Si nanocrystals and nanoislands. The density, crystallinity, and size of the Si nanoislands and Si nanocrystals can be controlled by the amount of nitrogen hosted in the SRO. The Si and SiO2 phase separation of the SRO during the annealing process is hindered by the incorporation of nitrogen.",

author = "Wolff-Ragnar Kiebach and Zhenrui Yu and Mariano Aceves-Mijares and Jinhui Du and Dongcai Bian and Rosa Lopez-Estopier and Jesus Carrillo-Lopez and Gabriel Juarez-Diaz and {Martinez Juarez}, Javier",

year = "2008",

doi = "10.1002/cvde.200806711",

language = "English",

volume = "14",

pages = "353--357",

journal = "Chemical Vapor Deposition",

issn = "0948-1907",

publisher = "Wiley - V C H Verlag GmbH & Co. KGaA",

number = "11-12",

}

Controlling the Size and Density of Silicon Nanostructures by Incorporation of Nitrogen. / Kiebach, Wolff-Ragnar; Yu, Zhenrui; Aceves-Mijares, Mariano; Du, Jinhui; Bian, Dongcai; Lopez-Estopier, Rosa; Carrillo-Lopez, Jesus; Juarez-Diaz, Gabriel; Martinez Juarez, Javier.

In: CHEMICAL VAPOR DEPOSITION, Vol. 14, No. 11-12, 2008, p. 353-357.

Research output: Contribution to journal › Journal article › Research › peer-review

TY - JOUR

T1 - Controlling the Size and Density of Silicon Nanostructures by Incorporation of Nitrogen

AU - Kiebach, Wolff-Ragnar

AU - Yu, Zhenrui

AU - Aceves-Mijares, Mariano

AU - Du, Jinhui

AU - Bian, Dongcai

AU - Lopez-Estopier, Rosa

AU - Carrillo-Lopez, Jesus

AU - Juarez-Diaz, Gabriel

AU - Martinez Juarez, Javier

PY - 2008

Y1 - 2008

N2 - Si nanostructures are prepared by thermal annealing of silicon rich oxide (SRO) which is deposited using low pressure (LP) CVD. X-ray diffraction (XRD), Raman spectroscopy, infrared (IR) spectroscopy, and transmission electron microscopy (TEM) are used to characterize the structure of the Si nanocrystals and nanoislands. The density, crystallinity, and size of the Si nanoislands and Si nanocrystals can be controlled by the amount of nitrogen hosted in the SRO. The Si and SiO2 phase separation of the SRO during the annealing process is hindered by the incorporation of nitrogen.

AB - Si nanostructures are prepared by thermal annealing of silicon rich oxide (SRO) which is deposited using low pressure (LP) CVD. X-ray diffraction (XRD), Raman spectroscopy, infrared (IR) spectroscopy, and transmission electron microscopy (TEM) are used to characterize the structure of the Si nanocrystals and nanoislands. The density, crystallinity, and size of the Si nanoislands and Si nanocrystals can be controlled by the amount of nitrogen hosted in the SRO. The Si and SiO2 phase separation of the SRO during the annealing process is hindered by the incorporation of nitrogen.

U2 - 10.1002/cvde.200806711

DO - 10.1002/cvde.200806711

M3 - Journal article

VL - 14

SP - 353

EP - 357

JO - Chemical Vapor Deposition

JF - Chemical Vapor Deposition

SN - 0948-1907

IS - 11-12

ER -

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10.1002/cvde.200806711