Controlling the conductivity of amorphous LaAlO3/SrTiO3 interfaces by in-situ application of an electric field during fabrication

Felix Trier; S. Amoruso; Dennis Valbjørn Christensen; A. Sambri; Yunzhong Chen; X. Wang; Eugen Stamate; R. Bruzzese; Nini Pryds

doi:10.1063/1.4815989

Controlling the conductivity of amorphous LaAlO3/SrTiO3 interfaces by in-situ application of an electric field during fabrication

Felix Trier, S. Amoruso, Dennis Valbjørn Christensen, A. Sambri, Yunzhong Chen, X. Wang, Eugen Stamate, R. Bruzzese, Nini Pryds

Department of Energy Conversion and Storage

University of Naples Federico II

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

Amorphous-LaAlO3/SrTiO3 interfaces present metallic conductivity similar to those found in their all-crystalline counterparts. Here, the conductivity of amorphous-LaAlO3/SrTiO3 interfaces is modified by an external electric field applied in-situ with a biased truncated cone electrode (−10 V ≤ Vbias ≤ 20 V) during film growth. By modulating the charge balance of the arriving plasma species, interfacial conduction of the amorphous-LaAlO3/SrTiO3 heterostructures shifts from metallic to insulating via a semiconducting-like characteristic transport mode. This remarkable behavior is explained by a modification of the Al-ion flux impinging the SrTiO3 surface, which alters the amount of near-interface oxygen vacancies being formed at the SrTiO3 surface.

Original language	English
Journal	Applied Physics Letters
Volume	103
Issue number	3
Pages (from-to)	031607
Number of pages	6
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.4815989
Publication status	Published - 2013

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title = "Controlling the conductivity of amorphous LaAlO3/SrTiO3 interfaces by in-situ application of an electric field during fabrication",

abstract = "Amorphous-LaAlO3/SrTiO3 interfaces present metallic conductivity similar to those found in their all-crystalline counterparts. Here, the conductivity of amorphous-LaAlO3/SrTiO3 interfaces is modified by an external electric field applied in-situ with a biased truncated cone electrode (−10 V ≤ Vbias ≤ 20 V) during film growth. By modulating the charge balance of the arriving plasma species, interfacial conduction of the amorphous-LaAlO3/SrTiO3 heterostructures shifts from metallic to insulating via a semiconducting-like characteristic transport mode. This remarkable behavior is explained by a modification of the Al-ion flux impinging the SrTiO3 surface, which alters the amount of near-interface oxygen vacancies being formed at the SrTiO3 surface.",

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AU - Trier, Felix

AU - Amoruso, S.

AU - Christensen, Dennis Valbjørn

AU - Sambri, A.

AU - Chen, Yunzhong

AU - Wang, X.

AU - Stamate, Eugen

AU - Bruzzese, R.

AU - Pryds, Nini

PY - 2013

Y1 - 2013

N2 - Amorphous-LaAlO3/SrTiO3 interfaces present metallic conductivity similar to those found in their all-crystalline counterparts. Here, the conductivity of amorphous-LaAlO3/SrTiO3 interfaces is modified by an external electric field applied in-situ with a biased truncated cone electrode (−10 V ≤ Vbias ≤ 20 V) during film growth. By modulating the charge balance of the arriving plasma species, interfacial conduction of the amorphous-LaAlO3/SrTiO3 heterostructures shifts from metallic to insulating via a semiconducting-like characteristic transport mode. This remarkable behavior is explained by a modification of the Al-ion flux impinging the SrTiO3 surface, which alters the amount of near-interface oxygen vacancies being formed at the SrTiO3 surface.

AB - Amorphous-LaAlO3/SrTiO3 interfaces present metallic conductivity similar to those found in their all-crystalline counterparts. Here, the conductivity of amorphous-LaAlO3/SrTiO3 interfaces is modified by an external electric field applied in-situ with a biased truncated cone electrode (−10 V ≤ Vbias ≤ 20 V) during film growth. By modulating the charge balance of the arriving plasma species, interfacial conduction of the amorphous-LaAlO3/SrTiO3 heterostructures shifts from metallic to insulating via a semiconducting-like characteristic transport mode. This remarkable behavior is explained by a modification of the Al-ion flux impinging the SrTiO3 surface, which alters the amount of near-interface oxygen vacancies being formed at the SrTiO3 surface.

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DO - 10.1063/1.4815989

M3 - Journal article

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VL - 103

SP - 031607

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

ER -

Controlling the conductivity of amorphous LaAlO3/SrTiO3 interfaces by in-situ application of an electric field during fabrication

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