Contact printed masks for 3D microfabrication in negative resists

Daniel Häfliger, Anja Boisen

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    Abstract

    We present a process based on contact printed shadow masks for three dimensional microfabrication of soft and sensitive overhanging membranes in SU-8. A metal mask is transferred onto unexposed SU-8 from an elastomer stamp made of polydimethylsiloxane. This mask is subsequently embedded into the negative resist to protect buried material from UV-exposure. Unlike direct evaporation-deposition of a mask onto the SU-8, printing avoids high stress and radiation, thus preventing resist wrinkling and prepolymerization. We demonstrate effective monolithic fabrication of soft, 4-μm thick and 100-μm long cantilevers integrated in a microfluidic system. The process yields very flat and well defined membrane surfaces.
    Original languageEnglish
    Title of host publication18th IEEE International Conference on Micro Electro Mechanical Systems, 2005.
    PublisherIEEE
    Publication date2005
    ISBN (Print)0-7803-8732-5
    DOIs
    Publication statusPublished - 2005
    Event18th IEEE International Conference on Micro Electro Mechanical Systems - Miami Beach, FL, United States
    Duration: 30 Jan 20053 Feb 2005
    Conference number: 18

    Conference

    Conference18th IEEE International Conference on Micro Electro Mechanical Systems
    Number18
    CountryUnited States
    CityMiami Beach, FL
    Period30/01/200503/02/2005

    Bibliographical note

    Copyright: 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

    Cite this

    Häfliger, D., & Boisen, A. (2005). Contact printed masks for 3D microfabrication in negative resists. In 18th IEEE International Conference on Micro Electro Mechanical Systems, 2005. IEEE. https://doi.org/10.1109/MEMSYS.2005.1453990