Contact metallurgy optimization for ohmic contacts to InP

Thomas Clausen; Arne Skyggebjerg Pedersen; Otto Leistiko

Contact metallurgy optimization for ohmic contacts to InP

Thomas Clausen, Arne Skyggebjerg Pedersen, Otto Leistiko

Technical University of Denmark

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

AuGeNi and AuZnNi metallizations to n- and p-InP were studied as a function of the annealing temperature in a Rapid Thermal Annealing (RTA) system. For n-InP (S:8Ã—1018cm-3) a broad minimum existed from 385Â°C to 500Â°C, in which the specific contact resistance, rc, was about 10-7 Â¿cm2. The lowest value of 7Ã—10-8 Â¿cm2 for n-InP occurred after RTA for 20 sec. at 450Â°C. For p-InP (Zn:5Ã—1018 cm-3) the lowest value of rc, 7Ã—10-6 Â¿cm2, was obtained for AuZn without any Ni. Metallurgical investigations indicated, that low rc values were associated with interfacial reactions and the formation of stable barrier-lowering metal-phosphides.

Original language	English
Title of host publication	21st European Solid State Device Research Conference
Publisher	IEEE
Publication date	1991
Pages	157-160
ISBN (Print)	0444890661
Publication status	Published - 1991
Event	21st European Solid State Device Research Conference - Montreux, Switzerland Duration: 16 Sep 1991 → 19 Sep 1991 Conference number: 21 http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=5435230

Conference

Conference	21st European Solid State Device Research Conference
Number	21
Country/Territory	Switzerland
City	Montreux
Period	16/09/1991 → 19/09/1991
Internet address	http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=5435230

Bibliographical note

Copyright: 1991 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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title = "Contact metallurgy optimization for ohmic contacts to InP",

abstract = "AuGeNi and AuZnNi metallizations to n- and p-InP were studied as a function of the annealing temperature in a Rapid Thermal Annealing (RTA) system. For n-InP (S:8{\~A}—1018cm-3) a broad minimum existed from 385{\^A}°C to 500{\^A}°C, in which the specific contact resistance, rc, was about 10-7 {\^A}¿cm2. The lowest value of 7{\~A}—10-8 {\^A}¿cm2 for n-InP occurred after RTA for 20 sec. at 450{\^A}°C. For p-InP (Zn:5{\~A}—1018 cm-3) the lowest value of rc, 7{\~A}—10-6 {\^A}¿cm2, was obtained for AuZn without any Ni. Metallurgical investigations indicated, that low rc values were associated with interfacial reactions and the formation of stable barrier-lowering metal-phosphides.",

author = "Thomas Clausen and Pedersen, {Arne Skyggebjerg} and Otto Leistiko",

note = "Copyright: 1991 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE; 21st European Solid State Device Research Conference, ESSDERC '91 ; Conference date: 16-09-1991 Through 19-09-1991",

year = "1991",

language = "English",

isbn = "0444890661",

pages = "157--160",

booktitle = "21st European Solid State Device Research Conference",

publisher = "IEEE",

address = "United States",

url = "http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=5435230",

}

TY - GEN

T1 - Contact metallurgy optimization for ohmic contacts to InP

AU - Clausen, Thomas

AU - Pedersen, Arne Skyggebjerg

AU - Leistiko, Otto

N1 - Conference code: 21

PY - 1991

Y1 - 1991

N2 - AuGeNi and AuZnNi metallizations to n- and p-InP were studied as a function of the annealing temperature in a Rapid Thermal Annealing (RTA) system. For n-InP (S:8Ã—1018cm-3) a broad minimum existed from 385Â°C to 500Â°C, in which the specific contact resistance, rc, was about 10-7 Â¿cm2. The lowest value of 7Ã—10-8 Â¿cm2 for n-InP occurred after RTA for 20 sec. at 450Â°C. For p-InP (Zn:5Ã—1018 cm-3) the lowest value of rc, 7Ã—10-6 Â¿cm2, was obtained for AuZn without any Ni. Metallurgical investigations indicated, that low rc values were associated with interfacial reactions and the formation of stable barrier-lowering metal-phosphides.

AB - AuGeNi and AuZnNi metallizations to n- and p-InP were studied as a function of the annealing temperature in a Rapid Thermal Annealing (RTA) system. For n-InP (S:8Ã—1018cm-3) a broad minimum existed from 385Â°C to 500Â°C, in which the specific contact resistance, rc, was about 10-7 Â¿cm2. The lowest value of 7Ã—10-8 Â¿cm2 for n-InP occurred after RTA for 20 sec. at 450Â°C. For p-InP (Zn:5Ã—1018 cm-3) the lowest value of rc, 7Ã—10-6 Â¿cm2, was obtained for AuZn without any Ni. Metallurgical investigations indicated, that low rc values were associated with interfacial reactions and the formation of stable barrier-lowering metal-phosphides.

M3 - Article in proceedings

SN - 0444890661

SP - 157

EP - 160

BT - 21st European Solid State Device Research Conference

PB - IEEE

T2 - 21st European Solid State Device Research Conference

Y2 - 16 September 1991 through 19 September 1991

ER -

Contact metallurgy optimization for ohmic contacts to InP

Abstract

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