Contact metallurgy optimization for ohmic contacts to InP

Thomas Clausen, Arne Skyggebjerg Pedersen, Otto Leistiko

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    Abstract

    AuGeNi and AuZnNi metallizations to n- and p-InP were studied as a function of the annealing temperature in a Rapid Thermal Annealing (RTA) system. For n-InP (S:8×1018cm-3) a broad minimum existed from 385°C to 500°C, in which the specific contact resistance, rc, was about 10-7 ¿cm2. The lowest value of 7×10-8 ¿cm2 for n-InP occurred after RTA for 20 sec. at 450°C. For p-InP (Zn:5×1018 cm-3) the lowest value of rc, 7×10-6 ¿cm2, was obtained for AuZn without any Ni. Metallurgical investigations indicated, that low rc values were associated with interfacial reactions and the formation of stable barrier-lowering metal-phosphides.
    Original languageEnglish
    Title of host publication21st European Solid State Device Research Conference
    PublisherIEEE
    Publication date1991
    Pages157-160
    ISBN (Print)0444890661
    Publication statusPublished - 1991
    Event21st European Solid State Device Research Conference - Montreux, Switzerland
    Duration: 16 Sep 199119 Sep 1991
    Conference number: 21
    http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=5435230

    Conference

    Conference21st European Solid State Device Research Conference
    Number21
    CountrySwitzerland
    CityMontreux
    Period16/09/199119/09/1991
    Internet address

    Bibliographical note

    Copyright: 1991 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

    Cite this

    Clausen, T., Pedersen, A. S., & Leistiko, O. (1991). Contact metallurgy optimization for ohmic contacts to InP. In 21st European Solid State Device Research Conference (pp. 157-160). IEEE.