Consequence of Non-Uniform Expansion of InP-on-Si Wafers for the Performance of Buried Heterostructure Photonic Crystal Lasers

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedings – Annual report year: 2019Researchpeer-review

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E-beam metrology is employed to investigate the consequences of non-uniform expansion of 250nm InP layer bonded to Si substrate by BCB and direct wafer bonding for the performance of photonic crystal lasers with buried heterostructures.

Original languageEnglish
Title of host publicationIntegrated Photonics Research, Silicon and Nanophotonics 2018
Number of pages2
PublisherOptical Society of America (OSA)
Publication date2018
Article numberPaper ITh1B.4
ISBN (Print)978-1-943580-43-9
DOIs
Publication statusPublished - 2018
EventIntegrated Photonics Research, Silicon and Nanophotonics 2018 - ETH Zurich, Zurich , Switzerland
Duration: 2 Jul 20185 Jul 2018

Conference

ConferenceIntegrated Photonics Research, Silicon and Nanophotonics 2018
LocationETH Zurich
CountrySwitzerland
CityZurich
Period02/07/201805/07/2018

Bibliographical note

From the session: Photonic Crystals and Nanocavities (ITh1B)

CitationsWeb of Science® Times Cited: No match on DOI

ID: 183534210