Consequence of Non-Uniform Expansion of InP-on-Si Wafers for the Performance of Buried Heterostructure Photonic Crystal Lasers

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

    Abstract

    E-beam metrology is employed to investigate the consequences of non-uniform expansion of 250nm InP layer bonded to Si substrate by BCB and direct wafer bonding for the performance of photonic crystal lasers with buried heterostructures.

    Original languageEnglish
    Title of host publicationIntegrated Photonics Research, Silicon and Nanophotonics 2018
    Number of pages2
    PublisherOptical Society of America (OSA)
    Publication date2018
    Article numberPaper ITh1B.4
    ISBN (Print)978-1-943580-43-9
    DOIs
    Publication statusPublished - 2018
    EventIntegrated Photonics Research, Silicon and Nanophotonics 2018 - ETH Zurich, Zurich , Switzerland
    Duration: 2 Jul 20185 Jul 2018

    Conference

    ConferenceIntegrated Photonics Research, Silicon and Nanophotonics 2018
    LocationETH Zurich
    Country/TerritorySwitzerland
    CityZurich
    Period02/07/201805/07/2018

    Bibliographical note

    From the session: Photonic Crystals and Nanocavities (ITh1B)

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