Consequence of Non-Uniform Expansion of InP-on-Si Wafers for the Performance of Buried Heterostructure Photonic Crystal Lasers

Aurimas Sakanas; Yi Yu; Elizaveta Semenova; Luisa Ottaviano; Hitesh Kumar Sahoo; Jesper Mørk; Kresten Yvind

doi:10.1364/IPRSN.2018.ITh1B.4

Consequence of Non-Uniform Expansion of InP-on-Si Wafers for the Performance of Buried Heterostructure Photonic Crystal Lasers

Aurimas Sakanas, Yi Yu, Elizaveta Semenova, Luisa Ottaviano, Hitesh Kumar Sahoo, Jesper Mørk, Kresten Yvind

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

E-beam metrology is employed to investigate the consequences of non-uniform expansion of 250nm InP layer bonded to Si substrate by BCB and direct wafer bonding for the performance of photonic crystal lasers with buried heterostructures.

Original language	English
Title of host publication	Integrated Photonics Research, Silicon and Nanophotonics 2018
Number of pages	2
Publisher	Optical Society of America (OSA)
Publication date	2018
Article number	Paper ITh1B.4
ISBN (Print)	978-1-943580-43-9
DOIs	https://doi.org/10.1364/IPRSN.2018.ITh1B.4
Publication status	Published - 2018
Event	Integrated Photonics Research, Silicon and Nanophotonics - ETH Zurich, Zurich, Switzerland Duration: 2 Jul 2018 → 5 Jul 2018

Conference

Conference	Integrated Photonics Research, Silicon and Nanophotonics
Location	ETH Zurich
Country/Territory	Switzerland
City	Zurich
Period	02/07/2018 → 05/07/2018

Bibliographical note

From the session: Photonic Crystals and Nanocavities (ITh1B)

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10.1364/IPRSN.2018.ITh1B.4

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Sakanas, A., Yu, Y., Semenova, E., Ottaviano, L., Sahoo, H. K., Mørk, J., & Yvind, K. (2018). Consequence of Non-Uniform Expansion of InP-on-Si Wafers for the Performance of Buried Heterostructure Photonic Crystal Lasers. In Integrated Photonics Research, Silicon and Nanophotonics 2018 [Paper ITh1B.4] Optical Society of America (OSA). https://doi.org/10.1364/IPRSN.2018.ITh1B.4

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title = "Consequence of Non-Uniform Expansion of InP-on-Si Wafers for the Performance of Buried Heterostructure Photonic Crystal Lasers",

abstract = "E-beam metrology is employed to investigate the consequences of non-uniform expansion of 250nm InP layer bonded to Si substrate by BCB and direct wafer bonding for the performance of photonic crystal lasers with buried heterostructures.",

author = "Aurimas Sakanas and Yi Yu and Elizaveta Semenova and Luisa Ottaviano and Sahoo, {Hitesh Kumar} and Jesper M{\o}rk and Kresten Yvind",

note = "From the session: Photonic Crystals and Nanocavities (ITh1B); Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018 ; Conference date: 02-07-2018 Through 05-07-2018",

year = "2018",

doi = "10.1364/IPRSN.2018.ITh1B.4",

language = "English",

isbn = "978-1-943580-43-9",

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Sakanas, A, Yu, Y , Semenova, E, Ottaviano, L, Sahoo, HK , Mørk, J & Yvind, K 2018, Consequence of Non-Uniform Expansion of InP-on-Si Wafers for the Performance of Buried Heterostructure Photonic Crystal Lasers. in Integrated Photonics Research, Silicon and Nanophotonics 2018., Paper ITh1B.4, Optical Society of America (OSA), Integrated Photonics Research, Silicon and Nanophotonics, Zurich, Switzerland, 02/07/2018. https://doi.org/10.1364/IPRSN.2018.ITh1B.4

Consequence of Non-Uniform Expansion of InP-on-Si Wafers for the Performance of Buried Heterostructure Photonic Crystal Lasers. / Sakanas, Aurimas; Yu, Yi ; Semenova, Elizaveta et al.
Integrated Photonics Research, Silicon and Nanophotonics 2018. Optical Society of America (OSA), 2018. Paper ITh1B.4.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

TY - GEN

T1 - Consequence of Non-Uniform Expansion of InP-on-Si Wafers for the Performance of Buried Heterostructure Photonic Crystal Lasers

AU - Sakanas, Aurimas

AU - Yu, Yi

AU - Semenova, Elizaveta

AU - Ottaviano, Luisa

AU - Sahoo, Hitesh Kumar

AU - Mørk, Jesper

AU - Yvind, Kresten

N1 - From the session: Photonic Crystals and Nanocavities (ITh1B)

PY - 2018

Y1 - 2018

N2 - E-beam metrology is employed to investigate the consequences of non-uniform expansion of 250nm InP layer bonded to Si substrate by BCB and direct wafer bonding for the performance of photonic crystal lasers with buried heterostructures.

AB - E-beam metrology is employed to investigate the consequences of non-uniform expansion of 250nm InP layer bonded to Si substrate by BCB and direct wafer bonding for the performance of photonic crystal lasers with buried heterostructures.

U2 - 10.1364/IPRSN.2018.ITh1B.4

DO - 10.1364/IPRSN.2018.ITh1B.4

M3 - Article in proceedings

SN - 978-1-943580-43-9

BT - Integrated Photonics Research, Silicon and Nanophotonics 2018

PB - Optical Society of America (OSA)

T2 - Integrated Photonics Research, Silicon and Nanophotonics

Y2 - 2 July 2018 through 5 July 2018

ER -

Consequence of Non-Uniform Expansion of InP-on-Si Wafers for the Performance of Buried Heterostructure Photonic Crystal Lasers

Abstract

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