Abstract
We consider the effect of a finite voltage bias on the conductance of single-atom gold contacts. We employ a nonorthogonal spn-tight-binding Hamiltonian combined with a local charge neutrality assumption. The conductance and charge distributions for finite bias are calculated using the nonequilibrium-Green-function formalism. We calculate the voltage drop through the contacts and find the main drop located near the negative electrode. We argue that this is due to the filled d-state resonances. The conduction is analyzed in terms of transmission eigenchannels and density of states of the eigenchannels projected onto tight-binding orbitals. We find a single almost fully transmitting channel with mainly s character for low bias while for high bias this channel becomes less transmitting and additional channels involving only d orbitals start to conduct.
| Original language | English |
|---|---|
| Journal | Physical Review B Condensed Matter |
| Volume | 60 |
| Issue number | 24 |
| Pages (from-to) | 17064-17070 |
| ISSN | 0163-1829 |
| DOIs | |
| Publication status | Published - 1999 |
Bibliographical note
Copyright (1999) by the American Physical Society.Keywords
- TRANSITION
- WIRES
- SIGNATURE
- DEFORMATION
- MESOSCOPIC SYSTEMS
- NANOWIRES
- QUANTIZED CONDUCTANCE
- RESISTANCE
- SCALE METALLIC CONTACTS
- SIZE CONTACTS