Conductance Enhancement of InAs/InP Heterostructure Nanowires by Surface Functionalization with Oligo(phenylene vinylene)s

Muhammed Ihab Schukfeh, Kristian Storm, Ahmed Mahmoud, Roar R. Søndergaard, Anna Szwajca, Allan Hansen, Peter Hinze, Thomas Weimann, Sofia Fahlvik Svensson, Achyut Bora, Kimberly A. Dick, Claes Thelander, Frederik C. Krebs, Paolo Lugli, Lars Samuelson, Marc Tornow

Research output: Contribution to journalJournal articlepeer-review

Abstract

We have investigated the electronic transport through 3 μm long, 45 nm diameter InAs nanowires comprising a 5 nm long InP segment as electronic barrier. After assembly of 12 nm long oligo(phenylene vinylene) derivative molecules onto these InAs/InP nanowires, we observed a pronounced, nonlinear I–V characteristic with significantly increased currents of up to 1 μA at 1 V bias, for a back-gate voltage of 3 V. As supported by our model calculations based on a nonequilibrium Green Function approach, we attribute this effect to charge transport through those surface-bound molecules, which electrically bridge both InAs regions across the embedded InP barrier.
Original languageEnglish
JournalACS Nano
Volume7
Issue number5
Pages (from-to)4111-4118
ISSN1936-086x
DOIs
Publication statusPublished - 2013

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