Computer-Aided Design of Microstrip GaAs Mesfet Amplifiers

Niels Ole Nielsen

doi:10.1109/EUMA.1976.332343

Computer-Aided Design of Microstrip GaAs Mesfet Amplifiers

Niels Ole Nielsen

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

Results on computer-aided design of broadband GaAs MESFET amplifiers in microstrip is presented. The analysis of an amplifier is based on measured scattering parameters and a model of the microstrip structure, which includes parasitics and junction effects. The optimized performance of one stage amplifiers with lossless distributed matching elements is presented. Realized amplifiers are in good agreement with the theory. One stage amplifiers with a 1 Â¿m FET in chip form exhibit 5.8 dB of gain in the range 8-12 GHz, while a gain of 4.5 dB from 4-8 GHz has been obtained with a packaged 1 Â¿m FET.

Original language	English
Title of host publication	Microwave Conference, 1976. 6th European
Publisher	IEEE
Publication date	1976
Pages	596-600
DOIs	https://doi.org/10.1109/EUMA.1976.332343
Publication status	Published - 1976
Event	6th European Microwave Conference - Rome, Italy Duration: 13 Sept 1976 → 16 Sept 1976 Conference number: 6 http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=4130898

Conference

Conference	6th European Microwave Conference
Number	6
Country/Territory	Italy
City	Rome
Period	13/09/1976 → 16/09/1976
Internet address	http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=4130898

Bibliographical note

Copyright: 1976 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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title = "Computer-Aided Design of Microstrip GaAs Mesfet Amplifiers",

abstract = "Results on computer-aided design of broadband GaAs MESFET amplifiers in microstrip is presented. The analysis of an amplifier is based on measured scattering parameters and a model of the microstrip structure, which includes parasitics and junction effects. The optimized performance of one stage amplifiers with lossless distributed matching elements is presented. Realized amplifiers are in good agreement with the theory. One stage amplifiers with a 1 {\^A}¿m FET in chip form exhibit 5.8 dB of gain in the range 8-12 GHz, while a gain of 4.5 dB from 4-8 GHz has been obtained with a packaged 1 {\^A}¿m FET.",

author = "Nielsen, \{Niels Ole\}",

note = "Copyright: 1976 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE; 6th European Microwave Conference ; Conference date: 13-09-1976 Through 16-09-1976",

year = "1976",

doi = "10.1109/EUMA.1976.332343",

language = "English",

pages = "596--600",

booktitle = "Microwave Conference, 1976. 6th European",

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T1 - Computer-Aided Design of Microstrip GaAs Mesfet Amplifiers

AU - Nielsen, Niels Ole

N1 - Conference code: 6

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N2 - Results on computer-aided design of broadband GaAs MESFET amplifiers in microstrip is presented. The analysis of an amplifier is based on measured scattering parameters and a model of the microstrip structure, which includes parasitics and junction effects. The optimized performance of one stage amplifiers with lossless distributed matching elements is presented. Realized amplifiers are in good agreement with the theory. One stage amplifiers with a 1 Â¿m FET in chip form exhibit 5.8 dB of gain in the range 8-12 GHz, while a gain of 4.5 dB from 4-8 GHz has been obtained with a packaged 1 Â¿m FET.

AB - Results on computer-aided design of broadband GaAs MESFET amplifiers in microstrip is presented. The analysis of an amplifier is based on measured scattering parameters and a model of the microstrip structure, which includes parasitics and junction effects. The optimized performance of one stage amplifiers with lossless distributed matching elements is presented. Realized amplifiers are in good agreement with the theory. One stage amplifiers with a 1 Â¿m FET in chip form exhibit 5.8 dB of gain in the range 8-12 GHz, while a gain of 4.5 dB from 4-8 GHz has been obtained with a packaged 1 Â¿m FET.

U2 - 10.1109/EUMA.1976.332343

DO - 10.1109/EUMA.1976.332343

M3 - Article in proceedings

SP - 596

EP - 600

BT - Microwave Conference, 1976. 6th European

PB - IEEE

T2 - 6th European Microwave Conference

Y2 - 13 September 1976 through 16 September 1976

ER -

Computer-Aided Design of Microstrip GaAs Mesfet Amplifiers

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