Results on computer-aided design of broadband GaAs MESFET amplifiers in microstrip is presented. The analysis of an amplifier is based on measured scattering parameters and a model of the microstrip structure, which includes parasitics and junction effects. The optimized performance of one stage amplifiers with lossless distributed matching elements is presented. Realized amplifiers are in good agreement with the theory. One stage amplifiers with a 1 Â¿m FET in chip form exhibit 5.8 dB of gain in the range 8-12 GHz, while a gain of 4.5 dB from 4-8 GHz has been obtained with a packaged 1 Â¿m FET.
|Title of host publication||Microwave Conference, 1976. 6th European|
|Publication status||Published - 1976|
|Event||6th European Microwave Conference - Rome, Italy|
Duration: 13 Sep 1976 → 16 Sep 1976
Conference number: 6
|Conference||6th European Microwave Conference|
|Period||13/09/1976 → 16/09/1976|