Computer-Aided Design of Microstrip GaAs Mesfet Amplifiers

Niels Ole Nielsen

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    Abstract

    Results on computer-aided design of broadband GaAs MESFET amplifiers in microstrip is presented. The analysis of an amplifier is based on measured scattering parameters and a model of the microstrip structure, which includes parasitics and junction effects. The optimized performance of one stage amplifiers with lossless distributed matching elements is presented. Realized amplifiers are in good agreement with the theory. One stage amplifiers with a 1 ¿m FET in chip form exhibit 5.8 dB of gain in the range 8-12 GHz, while a gain of 4.5 dB from 4-8 GHz has been obtained with a packaged 1 ¿m FET.
    Original languageEnglish
    Title of host publicationMicrowave Conference, 1976. 6th European
    PublisherIEEE
    Publication date1976
    Pages596-600
    DOIs
    Publication statusPublished - 1976
    Event6th European Microwave Conference - Rome, Italy
    Duration: 13 Sep 197616 Sep 1976
    Conference number: 6
    http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=4130898

    Conference

    Conference6th European Microwave Conference
    Number6
    CountryItaly
    CityRome
    Period13/09/197616/09/1976
    Internet address

    Bibliographical note

    Copyright: 1976 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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