Complex ion-focusing effect by the sheath above the wafer in plasma immersion ion implantation

Eugen Stamate, N. Holtzer, H. Sugai

Research output: Contribution to journalJournal articlepeer-review

Abstract

The ion flux on the wafer surface during plasma immersion ion implantation is investigated by three-dimensional simulations and experiments. Due to the finite size of the wafer and its stage, the evolving sheath acts as a lens that focuses the positive ions to distinct regions on the wafer surface. Depending on the sheath profile, two focusing effects are identified. Discrete focusing involves ions entering the sheath from its frontal side and leads to the formation of a passive surface near the wafer edge, while the modal focusing affects ions entering the sheath from the lateral side of the stage and are eventually directed to the wafer center
Original languageEnglish
JournalApplied Physics Letters
Volume86
Issue number26
Pages (from-to)261501-1 - 261501-3
ISSN0003-6951
DOIs
Publication statusPublished - 2005
Externally publishedYes

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