Photolumiscence (PL) and PL excitation (PLE) spectra of a novel step-graded strained Inx(Al0.17Ga0.83)1-xAs/Al0.17Ga0.83As multiple-quantum-well heterostructure consisting of five quantum wells with different x values have been investigated. Under indirect barrier excitation conditions a strongly nonuniform PL intensity distribution is observed between the five different wells, while no such difference in PL intensity is found by direct well excitation. PL enhancement and reduction observed for the different wells at the barrier band edge excitation are explained in terms of competitive capture of carriers from the barrier into the five wells.
|Title of host publication||Conference Proceedings, 2004 International Conference on Indium Phosphide and Related Materials|
|Publication status||Published - 2004|
|Event||16th International Conference on Indium Phosphide and Related Materials - Kagoshima, Japan|
Duration: 31 May 2004 → 4 Jun 2004
Conference number: 16
|Conference||16th International Conference on Indium Phosphide and Related Materials|
|Period||31/05/2004 → 04/06/2004|