Competitive capture of photoexcited carriers in a novel step-graded InX(Al0.17Ga0.83)1-XAs quantum well heterostructure

T. Tadakuma, S. Machida, A. Satake, K. Fujiwara, J.R. Folkenberg, Jørn Märcher Hvam

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

    Abstract

    Photolumiscence (PL) and PL excitation (PLE) spectra of a novel step-graded strained Inx(Al0.17Ga0.83)1-xAs/Al0.17Ga0.83As multiple-quantum-well heterostructure consisting of five quantum wells with different x values have been investigated. Under indirect barrier excitation conditions a strongly nonuniform PL intensity distribution is observed between the five different wells, while no such difference in PL intensity is found by direct well excitation. PL enhancement and reduction observed for the different wells at the barrier band edge excitation are explained in terms of competitive capture of carriers from the barrier into the five wells.
    Original languageEnglish
    Title of host publicationConference Proceedings, 2004 International Conference on Indium Phosphide and Related Materials
    Publication date2004
    Pages257-260
    ISBN (Print)07-80-38595-0
    Publication statusPublished - 2004
    Event16th International Conference on Indium Phosphide and Related Materials - Kagoshima, Japan
    Duration: 31 May 20044 Jun 2004
    Conference number: 16
    http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=9837

    Conference

    Conference16th International Conference on Indium Phosphide and Related Materials
    Number16
    Country/TerritoryJapan
    CityKagoshima
    Period31/05/200404/06/2004
    Internet address

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