Competitive capture of photoexcited carriers in a novel step-graded InX(Al0.17Ga0.83)1-XAs quantum well heterostructure

T. Tadakuma, S. Machida, A. Satake, K. Fujiwara, J.R. Folkenberg, Jørn Märcher Hvam

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

Photolumiscence (PL) and PL excitation (PLE) spectra of a novel step-graded strained Inx(Al0.17Ga0.83)1-xAs/Al0.17Ga0.83As multiple-quantum-well heterostructure consisting of five quantum wells with different x values have been investigated. Under indirect barrier excitation conditions a strongly nonuniform PL intensity distribution is observed between the five different wells, while no such difference in PL intensity is found by direct well excitation. PL enhancement and reduction observed for the different wells at the barrier band edge excitation are explained in terms of competitive capture of carriers from the barrier into the five wells.
Original languageEnglish
Title of host publicationConference Proceedings, 2004 International Conference on Indium Phosphide and Related Materials
Publication date2004
Pages257-260
ISBN (Print)07-80-38595-0
Publication statusPublished - 2004
Event16th International Conference on Indium Phosphide and Related Materials - Kagoshima, Japan
Duration: 31 May 20044 Jun 2004
Conference number: 16
http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=9837

Conference

Conference16th International Conference on Indium Phosphide and Related Materials
Number16
CountryJapan
CityKagoshima
Period31/05/200404/06/2004
Internet address

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