Comparison of High Resolution Negative Electron Beam Resists

Brian Bilenberg Olsen, Mikkel Schøler, Peixiong Shi, Michael Stenbæk Schmidt, Peter Bøggild, M. Fink, C. Schuster, F. Reuther, C. Gruetzner, Anders Kristensen

    Research output: Contribution to journal › Journal article › Research › peer-review

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    Abstract

    Four high resolution negative electron beam resists are compared: TEBN-1 from Tokuyama Corp. Japan, ma-N 2401XP and mr-L 6000AXP from microresist technology GmbH Germany, and SU-8 2000 series from MicroChem Corp., USA. Narrow linewidth high density patterns are defined by 100 kV electron beam lithography, and the pattern is transferred into silicon by a highly anisotropic SF6/O-2/CHF3 based reactive ion etch process with a selectivity between silicon and the investigated resists of approximately 2.20 nm half-pitch lines and 10 nm lines with a pitch down to 60 nm are written and transferred into silicon. (c) 2006 American Vacuum Society.
    Original languageEnglish
    JournalJournal of Vacuum Science & Technology B
    Volume24
    Issue number4
    Pages (from-to)1776-1779
    ISSN1071-1023
    DOIs
    Publication statusPublished - 2006

    Cite this

    Olsen, Brian Bilenberg ; Schøler, Mikkel ; Shi, Peixiong ; Schmidt, Michael Stenbæk ; Bøggild, Peter ; Fink, M. ; Schuster, C. ; Reuther, F. ; Gruetzner, C. ; Kristensen, Anders. / Comparison of High Resolution Negative Electron Beam Resists. In: Journal of Vacuum Science & Technology B. 2006 ; Vol. 24, No. 4. pp. 1776-1779.
    @article{fecfba610ab24fbd823a609f998cd073,
    title = "Comparison of High Resolution Negative Electron Beam Resists",
    abstract = "Four high resolution negative electron beam resists are compared: TEBN-1 from Tokuyama Corp. Japan, ma-N 2401XP and mr-L 6000AXP from microresist technology GmbH Germany, and SU-8 2000 series from MicroChem Corp., USA. Narrow linewidth high density patterns are defined by 100 kV electron beam lithography, and the pattern is transferred into silicon by a highly anisotropic SF6/O-2/CHF3 based reactive ion etch process with a selectivity between silicon and the investigated resists of approximately 2.20 nm half-pitch lines and 10 nm lines with a pitch down to 60 nm are written and transferred into silicon. (c) 2006 American Vacuum Society.",
    author = "Olsen, {Brian Bilenberg} and Mikkel Sch{\o}ler and Peixiong Shi and Schmidt, {Michael Stenb{\ae}k} and Peter B{\o}ggild and M. Fink and C. Schuster and F. Reuther and C. Gruetzner and Anders Kristensen",
    year = "2006",
    doi = "10.1116/1.2210002",
    language = "English",
    volume = "24",
    pages = "1776--1779",
    journal = "Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures",
    issn = "1071-1023",
    publisher = "American Institute of Physics",
    number = "4",

    }

    Olsen, BB, Schøler, M, Shi, P, Schmidt, MS, Bøggild, P, Fink, M, Schuster, C, Reuther, F, Gruetzner, C & Kristensen, A 2006, 'Comparison of High Resolution Negative Electron Beam Resists', Journal of Vacuum Science & Technology B, vol. 24, no. 4, pp. 1776-1779. https://doi.org/10.1116/1.2210002

    Comparison of High Resolution Negative Electron Beam Resists. / Olsen, Brian Bilenberg; Schøler, Mikkel; Shi, Peixiong; Schmidt, Michael Stenbæk; Bøggild, Peter; Fink, M.; Schuster, C.; Reuther, F.; Gruetzner, C.; Kristensen, Anders.

    In: Journal of Vacuum Science & Technology B, Vol. 24, No. 4, 2006, p. 1776-1779.

    Research output: Contribution to journal › Journal article › Research › peer-review

    TY - JOUR

    T1 - Comparison of High Resolution Negative Electron Beam Resists

    AU - Olsen, Brian Bilenberg

    AU - Schøler, Mikkel

    AU - Shi, Peixiong

    AU - Schmidt, Michael Stenbæk

    AU - Bøggild, Peter

    AU - Fink, M.

    AU - Schuster, C.

    AU - Reuther, F.

    AU - Gruetzner, C.

    AU - Kristensen, Anders

    PY - 2006

    Y1 - 2006

    N2 - Four high resolution negative electron beam resists are compared: TEBN-1 from Tokuyama Corp. Japan, ma-N 2401XP and mr-L 6000AXP from microresist technology GmbH Germany, and SU-8 2000 series from MicroChem Corp., USA. Narrow linewidth high density patterns are defined by 100 kV electron beam lithography, and the pattern is transferred into silicon by a highly anisotropic SF6/O-2/CHF3 based reactive ion etch process with a selectivity between silicon and the investigated resists of approximately 2.20 nm half-pitch lines and 10 nm lines with a pitch down to 60 nm are written and transferred into silicon. (c) 2006 American Vacuum Society.

    AB - Four high resolution negative electron beam resists are compared: TEBN-1 from Tokuyama Corp. Japan, ma-N 2401XP and mr-L 6000AXP from microresist technology GmbH Germany, and SU-8 2000 series from MicroChem Corp., USA. Narrow linewidth high density patterns are defined by 100 kV electron beam lithography, and the pattern is transferred into silicon by a highly anisotropic SF6/O-2/CHF3 based reactive ion etch process with a selectivity between silicon and the investigated resists of approximately 2.20 nm half-pitch lines and 10 nm lines with a pitch down to 60 nm are written and transferred into silicon. (c) 2006 American Vacuum Society.

    U2 - 10.1116/1.2210002

    DO - 10.1116/1.2210002

    M3 - Journal article

    VL - 24

    SP - 1776

    EP - 1779

    JO - Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures

    JF - Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures

    SN - 1071-1023

    IS - 4

    ER -

    Olsen BB, Schøler M, Shi P, Schmidt MS, Bøggild P, Fink M et al. Comparison of High Resolution Negative Electron Beam Resists. Journal of Vacuum Science & Technology B. 2006;24(4):1776-1779. https://doi.org/10.1116/1.2210002

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