Comparison of High Resolution Negative Electron Beam Resists

Brian Bilenberg Olsen; Mikkel Schøler; Peixiong Shi; Michael Stenbæk Schmidt; Peter Bøggild; M. Fink; C. Schuster; F. Reuther; C. Gruetzner; Anders Kristensen

doi:10.1116/1.2210002

Comparison of High Resolution Negative Electron Beam Resists

Brian Bilenberg Olsen, Mikkel Schøler, Peixiong Shi, Michael Stenbæk Schmidt, Peter Bøggild, M. Fink, C. Schuster, F. Reuther, C. Gruetzner, Anders Kristensen

Research output: Contribution to journal › Journal article › Research › peer-review

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Abstract

Four high resolution negative electron beam resists are compared: TEBN-1 from Tokuyama Corp. Japan, ma-N 2401XP and mr-L 6000AXP from microresist technology GmbH Germany, and SU-8 2000 series from MicroChem Corp., USA. Narrow linewidth high density patterns are defined by 100 kV electron beam lithography, and the pattern is transferred into silicon by a highly anisotropic SF6/O-2/CHF3 based reactive ion etch process with a selectivity between silicon and the investigated resists of approximately 2.20 nm half-pitch lines and 10 nm lines with a pitch down to 60 nm are written and transferred into silicon. (c) 2006 American Vacuum Society.

Original language	English
Journal	Journal of Vacuum Science & Technology B
Volume	24
Issue number	4
Pages (from-to)	1776-1779
ISSN	1071-1023
DOIs	https://doi.org/10.1116/1.2210002
Publication status	Published - 2006

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@article{fecfba610ab24fbd823a609f998cd073,

title = "Comparison of High Resolution Negative Electron Beam Resists",

abstract = "Four high resolution negative electron beam resists are compared: TEBN-1 from Tokuyama Corp. Japan, ma-N 2401XP and mr-L 6000AXP from microresist technology GmbH Germany, and SU-8 2000 series from MicroChem Corp., USA. Narrow linewidth high density patterns are defined by 100 kV electron beam lithography, and the pattern is transferred into silicon by a highly anisotropic SF6/O-2/CHF3 based reactive ion etch process with a selectivity between silicon and the investigated resists of approximately 2.20 nm half-pitch lines and 10 nm lines with a pitch down to 60 nm are written and transferred into silicon. (c) 2006 American Vacuum Society. ",

author = "Olsen, {Brian Bilenberg} and Mikkel Sch{\o}ler and Peixiong Shi and Schmidt, {Michael Stenb{\ae}k} and Peter B{\o}ggild and M. Fink and C. Schuster and F. Reuther and C. Gruetzner and Anders Kristensen",

year = "2006",

doi = "10.1116/1.2210002",

language = "English",

volume = "24",

pages = "1776--1779",

journal = "Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "American Institute of Physics",

number = "4",

}

Comparison of High Resolution Negative Electron Beam Resists. / Olsen, Brian Bilenberg; Schøler, Mikkel; Shi, Peixiong; Schmidt, Michael Stenbæk; Bøggild, Peter; Fink, M.; Schuster, C.; Reuther, F.; Gruetzner, C.; Kristensen, Anders.

In: Journal of Vacuum Science & Technology B, Vol. 24, No. 4, 2006, p. 1776-1779.

Research output: Contribution to journal › Journal article › Research › peer-review

TY - JOUR

T1 - Comparison of High Resolution Negative Electron Beam Resists

AU - Olsen, Brian Bilenberg

AU - Schøler, Mikkel

AU - Shi, Peixiong

AU - Schmidt, Michael Stenbæk

AU - Bøggild, Peter

AU - Fink, M.

AU - Schuster, C.

AU - Reuther, F.

AU - Gruetzner, C.

AU - Kristensen, Anders

PY - 2006

Y1 - 2006

N2 - Four high resolution negative electron beam resists are compared: TEBN-1 from Tokuyama Corp. Japan, ma-N 2401XP and mr-L 6000AXP from microresist technology GmbH Germany, and SU-8 2000 series from MicroChem Corp., USA. Narrow linewidth high density patterns are defined by 100 kV electron beam lithography, and the pattern is transferred into silicon by a highly anisotropic SF6/O-2/CHF3 based reactive ion etch process with a selectivity between silicon and the investigated resists of approximately 2.20 nm half-pitch lines and 10 nm lines with a pitch down to 60 nm are written and transferred into silicon. (c) 2006 American Vacuum Society.

AB - Four high resolution negative electron beam resists are compared: TEBN-1 from Tokuyama Corp. Japan, ma-N 2401XP and mr-L 6000AXP from microresist technology GmbH Germany, and SU-8 2000 series from MicroChem Corp., USA. Narrow linewidth high density patterns are defined by 100 kV electron beam lithography, and the pattern is transferred into silicon by a highly anisotropic SF6/O-2/CHF3 based reactive ion etch process with a selectivity between silicon and the investigated resists of approximately 2.20 nm half-pitch lines and 10 nm lines with a pitch down to 60 nm are written and transferred into silicon. (c) 2006 American Vacuum Society.

U2 - 10.1116/1.2210002

DO - 10.1116/1.2210002

M3 - Journal article

VL - 24

SP - 1776

EP - 1779

JO - Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures

SN - 1071-1023

IS - 4

ER -