Comparison of High Resolution Negative Electron Beam Resists

Brian Bilenberg Olsen, Mikkel Schøler, Peixiong Shi, Michael Stenbæk Schmidt, Peter Bøggild, M. Fink, C. Schuster, F. Reuther, C. Gruetzner, Anders Kristensen

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    Four high resolution negative electron beam resists are compared: TEBN-1 from Tokuyama Corp. Japan, ma-N 2401XP and mr-L 6000AXP from microresist technology GmbH Germany, and SU-8 2000 series from MicroChem Corp., USA. Narrow linewidth high density patterns are defined by 100 kV electron beam lithography, and the pattern is transferred into silicon by a highly anisotropic SF6/O-2/CHF3 based reactive ion etch process with a selectivity between silicon and the investigated resists of approximately 2.20 nm half-pitch lines and 10 nm lines with a pitch down to 60 nm are written and transferred into silicon. (c) 2006 American Vacuum Society.
    Original languageEnglish
    JournalJournal of Vacuum Science & Technology B
    Issue number4
    Pages (from-to)1776-1779
    Publication statusPublished - 2006


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