Comparison of High Resolution Negative Electron Beam Resists

Brian Bilenberg Olsen, Mikkel Schøler, Peixiong Shi, Michael Stenbæk Schmidt, Peter Bøggild, M. Fink, C. Schuster, F. Reuther, C. Gruetzner, Anders Kristensen

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    Abstract

    Four high resolution negative electron beam resists are compared: TEBN-1 from Tokuyama Corp. Japan, ma-N 2401XP and mr-L 6000AXP from microresist technology GmbH Germany, and SU-8 2000 series from MicroChem Corp., USA. Narrow linewidth high density patterns are defined by 100 kV electron beam lithography, and the pattern is transferred into silicon by a highly anisotropic SF6/O-2/CHF3 based reactive ion etch process with a selectivity between silicon and the investigated resists of approximately 2.20 nm half-pitch lines and 10 nm lines with a pitch down to 60 nm are written and transferred into silicon. (c) 2006 American Vacuum Society.
    Original languageEnglish
    JournalJournal of Vacuum Science & Technology B
    Volume24
    Issue number4
    Pages (from-to)1776-1779
    ISSN1071-1023
    DOIs
    Publication statusPublished - 2006

    Cite this

    Olsen, Brian Bilenberg ; Schøler, Mikkel ; Shi, Peixiong ; Schmidt, Michael Stenbæk ; Bøggild, Peter ; Fink, M. ; Schuster, C. ; Reuther, F. ; Gruetzner, C. ; Kristensen, Anders. / Comparison of High Resolution Negative Electron Beam Resists. In: Journal of Vacuum Science & Technology B. 2006 ; Vol. 24, No. 4. pp. 1776-1779.
    @article{fecfba610ab24fbd823a609f998cd073,
    title = "Comparison of High Resolution Negative Electron Beam Resists",
    abstract = "Four high resolution negative electron beam resists are compared: TEBN-1 from Tokuyama Corp. Japan, ma-N 2401XP and mr-L 6000AXP from microresist technology GmbH Germany, and SU-8 2000 series from MicroChem Corp., USA. Narrow linewidth high density patterns are defined by 100 kV electron beam lithography, and the pattern is transferred into silicon by a highly anisotropic SF6/O-2/CHF3 based reactive ion etch process with a selectivity between silicon and the investigated resists of approximately 2.20 nm half-pitch lines and 10 nm lines with a pitch down to 60 nm are written and transferred into silicon. (c) 2006 American Vacuum Society.",
    author = "Olsen, {Brian Bilenberg} and Mikkel Sch{\o}ler and Peixiong Shi and Schmidt, {Michael Stenb{\ae}k} and Peter B{\o}ggild and M. Fink and C. Schuster and F. Reuther and C. Gruetzner and Anders Kristensen",
    year = "2006",
    doi = "10.1116/1.2210002",
    language = "English",
    volume = "24",
    pages = "1776--1779",
    journal = "Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures",
    issn = "1071-1023",
    publisher = "American Institute of Physics",
    number = "4",

    }

    Olsen, BB, Schøler, M, Shi, P, Schmidt, MS, Bøggild, P, Fink, M, Schuster, C, Reuther, F, Gruetzner, C & Kristensen, A 2006, 'Comparison of High Resolution Negative Electron Beam Resists', Journal of Vacuum Science & Technology B, vol. 24, no. 4, pp. 1776-1779. https://doi.org/10.1116/1.2210002

    Comparison of High Resolution Negative Electron Beam Resists. / Olsen, Brian Bilenberg; Schøler, Mikkel; Shi, Peixiong; Schmidt, Michael Stenbæk; Bøggild, Peter; Fink, M.; Schuster, C.; Reuther, F.; Gruetzner, C.; Kristensen, Anders.

    In: Journal of Vacuum Science & Technology B, Vol. 24, No. 4, 2006, p. 1776-1779.

    Research output: Contribution to journalJournal articleResearchpeer-review

    TY - JOUR

    T1 - Comparison of High Resolution Negative Electron Beam Resists

    AU - Olsen, Brian Bilenberg

    AU - Schøler, Mikkel

    AU - Shi, Peixiong

    AU - Schmidt, Michael Stenbæk

    AU - Bøggild, Peter

    AU - Fink, M.

    AU - Schuster, C.

    AU - Reuther, F.

    AU - Gruetzner, C.

    AU - Kristensen, Anders

    PY - 2006

    Y1 - 2006

    N2 - Four high resolution negative electron beam resists are compared: TEBN-1 from Tokuyama Corp. Japan, ma-N 2401XP and mr-L 6000AXP from microresist technology GmbH Germany, and SU-8 2000 series from MicroChem Corp., USA. Narrow linewidth high density patterns are defined by 100 kV electron beam lithography, and the pattern is transferred into silicon by a highly anisotropic SF6/O-2/CHF3 based reactive ion etch process with a selectivity between silicon and the investigated resists of approximately 2.20 nm half-pitch lines and 10 nm lines with a pitch down to 60 nm are written and transferred into silicon. (c) 2006 American Vacuum Society.

    AB - Four high resolution negative electron beam resists are compared: TEBN-1 from Tokuyama Corp. Japan, ma-N 2401XP and mr-L 6000AXP from microresist technology GmbH Germany, and SU-8 2000 series from MicroChem Corp., USA. Narrow linewidth high density patterns are defined by 100 kV electron beam lithography, and the pattern is transferred into silicon by a highly anisotropic SF6/O-2/CHF3 based reactive ion etch process with a selectivity between silicon and the investigated resists of approximately 2.20 nm half-pitch lines and 10 nm lines with a pitch down to 60 nm are written and transferred into silicon. (c) 2006 American Vacuum Society.

    U2 - 10.1116/1.2210002

    DO - 10.1116/1.2210002

    M3 - Journal article

    VL - 24

    SP - 1776

    EP - 1779

    JO - Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures

    JF - Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures

    SN - 1071-1023

    IS - 4

    ER -