Comparison of continuum and atomistic methods for the analysis of InAs/GaAs quantum dots

D. Barettin, A. Pecchia, G. Penazzi, Matthias Auf der Maur, B. Lassen, M. Willatzen, A. di Carlo

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

We present a comparison of continuum k · p and atomistic empirical Tight Binding methods for the analysis of the optoelectronic properties of InAs/GaAs quantum dots.

Original languageEnglish
Title of host publicationProceedings of the 2011 11th International Conference on Numerical Simulation of Optoelectronic Devices
Publication date2011
Pages177-178
ISBN (Print)978-1-61284-876-1
ISBN (Electronic)978-1-61284-878-5
DOIs
Publication statusPublished - 2011
Event11th International Conference on Numerical Simulation of Optoelectronic Devices - Rome, Italy
Duration: 5 Sep 20118 Sep 2011
Conference number: 11
http://www.nusod.org/2011/

Conference

Conference11th International Conference on Numerical Simulation of Optoelectronic Devices
Number11
CountryItaly
CityRome
Period05/09/201108/09/2011
Internet address

Keywords

  • gallium arsenide
  • III-V semiconductors
  • indium compounds
  • semiconductor quantum dots
  • tight-binding calculations

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