Comparison of continuum and atomistic methods for the analysis of InAs/GaAs quantum dots

D. Barettin; A. Pecchia; G. Penazzi; Matthias Auf der Maur; B. Lassen; M. Willatzen; A. di Carlo

doi:10.1109/NUSOD.2011.6041203

Comparison of continuum and atomistic methods for the analysis of InAs/GaAs quantum dots

D. Barettin, A. Pecchia, G. Penazzi, Matthias Auf der Maur, B. Lassen, M. Willatzen, A. di Carlo

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

We present a comparison of continuum k · p and atomistic empirical Tight Binding methods for the analysis of the optoelectronic properties of InAs/GaAs quantum dots.

Original language	English
Title of host publication	Proceedings of the 2011 11th International Conference on Numerical Simulation of Optoelectronic Devices
Publication date	2011
Pages	177-178
ISBN (Print)	978-1-61284-876-1
ISBN (Electronic)	978-1-61284-878-5
DOIs	https://doi.org/10.1109/NUSOD.2011.6041203
Publication status	Published - 2011
Event	11th International Conference on Numerical Simulation of Optoelectronic Devices - Rome, Italy Duration: 5 Sept 2011 → 8 Sept 2011 Conference number: 11 http://www.nusod.org/2011/

Conference

Conference	11th International Conference on Numerical Simulation of Optoelectronic Devices
Number	11
Country/Territory	Italy
City	Rome
Period	05/09/2011 → 08/09/2011
Internet address	http://www.nusod.org/2011/

Keywords

gallium arsenide
III-V semiconductors
indium compounds
semiconductor quantum dots
tight-binding calculations

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10.1109/NUSOD.2011.6041203

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title = "Comparison of continuum and atomistic methods for the analysis of InAs/GaAs quantum dots",

abstract = "We present a comparison of continuum k · p and atomistic empirical Tight Binding methods for the analysis of the optoelectronic properties of InAs/GaAs quantum dots.",

keywords = "gallium arsenide, III-V semiconductors, indium compounds, semiconductor quantum dots, tight-binding calculations",

author = "D. Barettin and A. Pecchia and G. Penazzi and {Auf der Maur}, Matthias and B. Lassen and M. Willatzen and {di Carlo}, A.",

year = "2011",

doi = "10.1109/NUSOD.2011.6041203",

language = "English",

isbn = "978-1-61284-876-1",

pages = "177--178",

booktitle = "Proceedings of the 2011 11th International Conference on Numerical Simulation of Optoelectronic Devices",

note = "11th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2011 ; Conference date: 05-09-2011 Through 08-09-2011",

url = "http://www.nusod.org/2011/",

}

Barettin, D, Pecchia, A, Penazzi, G, Auf der Maur, M, Lassen, B, Willatzen, M & di Carlo, A 2011, Comparison of continuum and atomistic methods for the analysis of InAs/GaAs quantum dots. in Proceedings of the 2011 11th International Conference on Numerical Simulation of Optoelectronic Devices. pp. 177-178, 11th International Conference on Numerical Simulation of Optoelectronic Devices, Rome, Italy, 05/09/2011. https://doi.org/10.1109/NUSOD.2011.6041203

Comparison of continuum and atomistic methods for the analysis of InAs/GaAs quantum dots. / Barettin, D.; Pecchia, A.; Penazzi, G. et al.
Proceedings of the 2011 11th International Conference on Numerical Simulation of Optoelectronic Devices. 2011. p. 177-178.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

TY - GEN

T1 - Comparison of continuum and atomistic methods for the analysis of InAs/GaAs quantum dots

AU - Barettin, D.

AU - Pecchia, A.

AU - Penazzi, G.

AU - Auf der Maur, Matthias

AU - Lassen, B.

AU - Willatzen, M.

AU - di Carlo, A.

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AB - We present a comparison of continuum k · p and atomistic empirical Tight Binding methods for the analysis of the optoelectronic properties of InAs/GaAs quantum dots.

KW - gallium arsenide

KW - III-V semiconductors

KW - indium compounds

KW - semiconductor quantum dots

KW - tight-binding calculations

U2 - 10.1109/NUSOD.2011.6041203

DO - 10.1109/NUSOD.2011.6041203

M3 - Article in proceedings

SN - 978-1-61284-876-1

SP - 177

EP - 178

BT - Proceedings of the 2011 11th International Conference on Numerical Simulation of Optoelectronic Devices

T2 - 11th International Conference on Numerical Simulation of Optoelectronic Devices

Y2 - 5 September 2011 through 8 September 2011

ER -

Comparison of continuum and atomistic methods for the analysis of InAs/GaAs quantum dots

Abstract

Conference

Keywords

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