Comparison of Atomistic and Continuum Quantum-Dot Elastic Models and Implications for Optoelectronic Properties

D. Barettin, S. Madsen, B. Lassen, M. Willatzen

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

A comparison between continuum and atomistic valence force field (VFF) strain models is presented for zincblende InGaAs/GaAs spherical quantum dots (QD), showing differences in the off-diagonal components of the strain tensor, relavant for optoelectronic properties. We also present a comparison with the continuum model between different homogeneous compositions and concentration profiles. It is shown that the biaxial strain component is different from zero inside the QD in the linear concentration case which is known to have an effect on the valence band electrons.
Original languageEnglish
Title of host publicationPhysics of Semiconductors : 30th International Conference on the Physics of Semiconductors
Publication date2011
Pages445-446
ISBN (Print)978-0-7354-1002-2
DOIs
Publication statusPublished - 2011
Externally publishedYes
Event30th International Conference on the Physics of Semiconductors - Seoul, Korea, Republic of
Duration: 25 Jul 201030 Jul 2010
Conference number: 30
http://www.icps2010.org/

Conference

Conference30th International Conference on the Physics of Semiconductors
Number30
CountryKorea, Republic of
CitySeoul
Period25/07/201030/07/2010
Internet address
SeriesAip Conference Proceedings
Volume1399
ISSN0094-243X

Keywords

  • Strain
  • Valence force fields
  • Contiuum model
  • Optoelectronic properties

Cite this

Barettin, D., Madsen, S., Lassen, B., & Willatzen, M. (2011). Comparison of Atomistic and Continuum Quantum-Dot Elastic Models and Implications for Optoelectronic Properties. In Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors (pp. 445-446). Aip Conference Proceedings, Vol.. 1399 https://doi.org/10.1063/1.3666445
Barettin, D. ; Madsen, S. ; Lassen, B. ; Willatzen, M. / Comparison of Atomistic and Continuum Quantum-Dot Elastic Models and Implications for Optoelectronic Properties. Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors. 2011. pp. 445-446 (Aip Conference Proceedings, Vol. 1399).
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Barettin, D, Madsen, S, Lassen, B & Willatzen, M 2011, Comparison of Atomistic and Continuum Quantum-Dot Elastic Models and Implications for Optoelectronic Properties. in Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors. Aip Conference Proceedings, vol. 1399, pp. 445-446, 30th International Conference on the Physics of Semiconductors, Seoul, Korea, Republic of, 25/07/2010. https://doi.org/10.1063/1.3666445

Comparison of Atomistic and Continuum Quantum-Dot Elastic Models and Implications for Optoelectronic Properties. / Barettin, D.; Madsen, S.; Lassen, B.; Willatzen, M.

Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors. 2011. p. 445-446 (Aip Conference Proceedings, Vol. 1399).

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

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Barettin D, Madsen S, Lassen B, Willatzen M. Comparison of Atomistic and Continuum Quantum-Dot Elastic Models and Implications for Optoelectronic Properties. In Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors. 2011. p. 445-446. (Aip Conference Proceedings, Vol. 1399). https://doi.org/10.1063/1.3666445