Comparison of a state of the art Si IGBT and next generation fast switching devices in a 4 kW boost converter

Alexander Anthon; Zhe Zhang; Michael A. E. Andersen

doi:10.1109/ECCE.2015.7310080

Comparison of a state of the art Si IGBT and next generation fast switching devices in a 4 kW boost converter

Alexander Anthon, Zhe Zhang, Michael A. E. Andersen

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

This paper gives a comprehensive comparison of two promising silicon carbide (SiC) switching devices, i.e. normally-off SiC MOSFET and a normally-on SiC JFET, as alternatives to a conventional state of the art Si IGBT. The comparison uses datasheet information to determine conduction losses, switching transition measurements for switching loss calculations and electrical power measurements in a boost converter. Using SiC switching devices, switching energies can be reduced by almost 70% and the forward voltages of such devices are much lower compared to the IGBT which then reduce the conduction losses. This reduction in semiconductor losses can increase overall converter efficiencies up to 0.4% at 20kHz or enable high frequency operation up to 100 kHz which then reduces the size and weight of the inductor by more than 75% while still achieving efficiencies over 98.3 %.

Original language	English
Title of host publication	Proceedings of 2015 IEEE Energy Conversion Congress and Exposition
Publisher	IEEE
Publication date	2015
Pages	3003-3011
ISBN (Print)	9781467371513
DOIs	https://doi.org/10.1109/ECCE.2015.7310080
Publication status	Published - 2015
Event	2015 IEEE Energy Conversion Congress and Exposition - Palais des congrès de Montréal , Montreal, Canada Duration: 20 Sept 2015 → 24 Sept 2015 https://ieeexplore.ieee.org/xpl/conhome/7298093/proceeding

Conference

Conference	2015 IEEE Energy Conversion Congress and Exposition
Location	Palais des congrès de Montréal
Country/Territory	Canada
City	Montreal
Period	20/09/2015 → 24/09/2015
Internet address	https://ieeexplore.ieee.org/xpl/conhome/7298093/proceeding

Keywords

Power, Energy and Industry Applications
Boost converter
Efficiency
Insulated gate bipolar transistors
JFETs
Logic gates
MOSFET
Si IGBT
SiC JFET
SiC MOSFET
Silicon
Silicon carbide
Switches

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@inproceedings{fed2478b2fc34b679d486f161c17a252,

title = "Comparison of a state of the art Si IGBT and next generation fast switching devices in a 4 kW boost converter",

abstract = "This paper gives a comprehensive comparison of two promising silicon carbide (SiC) switching devices, i.e. normally-off SiC MOSFET and a normally-on SiC JFET, as alternatives to a conventional state of the art Si IGBT. The comparison uses datasheet information to determine conduction losses, switching transition measurements for switching loss calculations and electrical power measurements in a boost converter. Using SiC switching devices, switching energies can be reduced by almost 70% and the forward voltages of such devices are much lower compared to the IGBT which then reduce the conduction losses. This reduction in semiconductor losses can increase overall converter efficiencies up to 0.4% at 20kHz or enable high frequency operation up to 100 kHz which then reduces the size and weight of the inductor by more than 75% while still achieving efficiencies over 98.3 %.",

keywords = "Power, Energy and Industry Applications, Boost converter, Efficiency, Insulated gate bipolar transistors, JFETs, Logic gates, MOSFET, Si IGBT, SiC JFET, SiC MOSFET, Silicon, Silicon carbide, Switches",

author = "Alexander Anthon and Zhe Zhang and Andersen, {Michael A. E.}",

year = "2015",

doi = "10.1109/ECCE.2015.7310080",

language = "English",

isbn = "9781467371513",

pages = "3003--3011",

booktitle = "Proceedings of 2015 IEEE Energy Conversion Congress and Exposition",

publisher = "IEEE",

address = "United States",

note = "2015 IEEE Energy Conversion Congress and Exposition, ECCE 2015 ; Conference date: 20-09-2015 Through 24-09-2015",

url = "https://ieeexplore.ieee.org/xpl/conhome/7298093/proceeding",

}

Anthon, A, Zhang, Z & Andersen, MAE 2015, Comparison of a state of the art Si IGBT and next generation fast switching devices in a 4 kW boost converter. in Proceedings of 2015 IEEE Energy Conversion Congress and Exposition. IEEE, pp. 3003-3011, 2015 IEEE Energy Conversion Congress and Exposition, Montreal, Quebec, Canada, 20/09/2015. https://doi.org/10.1109/ECCE.2015.7310080

Comparison of a state of the art Si IGBT and next generation fast switching devices in a 4 kW boost converter. / Anthon, Alexander; Zhang, Zhe; Andersen, Michael A. E.
Proceedings of 2015 IEEE Energy Conversion Congress and Exposition. IEEE, 2015. p. 3003-3011.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

TY - GEN

T1 - Comparison of a state of the art Si IGBT and next generation fast switching devices in a 4 kW boost converter

AU - Anthon, Alexander

AU - Zhang, Zhe

AU - Andersen, Michael A. E.

PY - 2015

Y1 - 2015

N2 - This paper gives a comprehensive comparison of two promising silicon carbide (SiC) switching devices, i.e. normally-off SiC MOSFET and a normally-on SiC JFET, as alternatives to a conventional state of the art Si IGBT. The comparison uses datasheet information to determine conduction losses, switching transition measurements for switching loss calculations and electrical power measurements in a boost converter. Using SiC switching devices, switching energies can be reduced by almost 70% and the forward voltages of such devices are much lower compared to the IGBT which then reduce the conduction losses. This reduction in semiconductor losses can increase overall converter efficiencies up to 0.4% at 20kHz or enable high frequency operation up to 100 kHz which then reduces the size and weight of the inductor by more than 75% while still achieving efficiencies over 98.3 %.

AB - This paper gives a comprehensive comparison of two promising silicon carbide (SiC) switching devices, i.e. normally-off SiC MOSFET and a normally-on SiC JFET, as alternatives to a conventional state of the art Si IGBT. The comparison uses datasheet information to determine conduction losses, switching transition measurements for switching loss calculations and electrical power measurements in a boost converter. Using SiC switching devices, switching energies can be reduced by almost 70% and the forward voltages of such devices are much lower compared to the IGBT which then reduce the conduction losses. This reduction in semiconductor losses can increase overall converter efficiencies up to 0.4% at 20kHz or enable high frequency operation up to 100 kHz which then reduces the size and weight of the inductor by more than 75% while still achieving efficiencies over 98.3 %.

KW - Power, Energy and Industry Applications

KW - Boost converter

KW - Efficiency

KW - Insulated gate bipolar transistors

KW - JFETs

KW - Logic gates

KW - MOSFET

KW - Si IGBT

KW - SiC JFET

KW - SiC MOSFET

KW - Silicon

KW - Silicon carbide

KW - Switches

U2 - 10.1109/ECCE.2015.7310080

DO - 10.1109/ECCE.2015.7310080

M3 - Article in proceedings

SN - 9781467371513

SP - 3003

EP - 3011

BT - Proceedings of 2015 IEEE Energy Conversion Congress and Exposition

PB - IEEE

T2 - 2015 IEEE Energy Conversion Congress and Exposition

Y2 - 20 September 2015 through 24 September 2015

ER -

Comparison of a state of the art Si IGBT and next generation fast switching devices in a 4 kW boost converter

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