Comparison of a state of the art Si IGBT and next generation fast switching devices in a 4 kW boost converter

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Abstract

This paper gives a comprehensive comparison of two promising silicon carbide (SiC) switching devices, i.e. normally-off SiC MOSFET and a normally-on SiC JFET, as alternatives to a conventional state of the art Si IGBT. The comparison uses datasheet information to determine conduction losses, switching transition measurements for switching loss calculations and electrical power measurements in a boost converter. Using SiC switching devices, switching energies can be reduced by almost 70% and the forward voltages of such devices are much lower compared to the IGBT which then reduce the conduction losses. This reduction in semiconductor losses can increase overall converter efficiencies up to 0.4% at 20kHz or enable high frequency operation up to 100 kHz which then reduces the size and weight of the inductor by more than 75% while still achieving efficiencies over 98.3 %.
Original languageEnglish
Title of host publicationProceedings of 2015 IEEE Energy Conversion Congress and Exposition
PublisherIEEE
Publication date2015
Pages3003-3011
ISBN (Print)9781467371513
DOIs
Publication statusPublished - 2015
Event2015 IEEE Energy Conversion Congress and Exposition - Palais des congrès de Montréal , Montreal, Canada
Duration: 20 Sep 201524 Sep 2015

Conference

Conference2015 IEEE Energy Conversion Congress and Exposition
LocationPalais des congrès de Montréal
CountryCanada
CityMontreal
Period20/09/201524/09/2015

Keywords

  • Power, Energy and Industry Applications
  • Boost converter
  • Efficiency
  • Insulated gate bipolar transistors
  • JFETs
  • Logic gates
  • MOSFET
  • Si IGBT
  • SiC JFET
  • SiC MOSFET
  • Silicon
  • Silicon carbide
  • Switches

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