Comparative Study of Si and SiC MOSFETs for High Voltage Class D Audio Amplifiers

Dennis Nielsen; Arnold Knott; Michael A. E. Andersen

Comparative Study of Si and SiC MOSFETs for High Voltage Class D Audio Amplifiers

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Abstract

Silicon (Si) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are traditional utilised in class D audio amplifiers. It has been proposed to replace the traditional inefficient electrodynamic transducer with the electrostatic transducer. This imposes new high voltage requirements on the MOSFETs of class D amplifiers, and significantly reduces the selection of suitable MOSFETs. As a consequence it is investigated, if Silicon-Carbide (SiC) MOSFETs could represent a valid alternative. The theory of pulse timing errors are revisited for the application of high voltage and capactive loaded class D amplifiers. It is shown, that SiC MOSFETs can compete with Si MSOFETs in terms of THD. Validation is done using simulations and a 500 V amplifier driving a 100 nF load. THD+N below 0.3 % is reported

Original language	English
Title of host publication	Proceedings of the 137th AES Convention
Number of pages	6
Publication date	2014
Publication status	Published - 2014
Event	AES 137^th Convention - Los Angeles, United States Duration: 9 Oct 2014 → 12 Oct 2014

Conference

Conference	AES 137^th Convention
Country/Territory	United States
City	Los Angeles
Period	09/10/2014 → 12/10/2014

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@inproceedings{000b0add979c4bcdb49089469b6bb0cb,

title = "Comparative Study of Si and SiC MOSFETs for High Voltage Class D Audio Amplifiers",

abstract = "Silicon (Si) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are traditional utilised in class D audio amplifiers. It has been proposed to replace the traditional inefficient electrodynamic transducer with the electrostatic transducer. This imposes new high voltage requirements on the MOSFETs of class D amplifiers, and significantly reduces the selection of suitable MOSFETs. As a consequence it is investigated, if Silicon-Carbide (SiC) MOSFETs could represent a valid alternative. The theory of pulse timing errors are revisited for the application of high voltage and capactive loaded class D amplifiers. It is shown, that SiC MOSFETs can compete with Si MSOFETs in terms of THD. Validation is done using simulations and a 500 V amplifier driving a 100 nF load. THD+N below 0.3 \% is reported",

author = "Dennis Nielsen and Arnold Knott and Andersen, \{Michael A. E.\}",

year = "2014",

language = "English",

booktitle = "Proceedings of the 137th AES Convention",

note = "AES 137<sup>th</sup> Convention ; Conference date: 09-10-2014 Through 12-10-2014",

}

TY - GEN

T1 - Comparative Study of Si and SiC MOSFETs for High Voltage Class D Audio Amplifiers

AU - Nielsen, Dennis

AU - Knott, Arnold

AU - Andersen, Michael A. E.

PY - 2014

Y1 - 2014

N2 - Silicon (Si) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are traditional utilised in class D audio amplifiers. It has been proposed to replace the traditional inefficient electrodynamic transducer with the electrostatic transducer. This imposes new high voltage requirements on the MOSFETs of class D amplifiers, and significantly reduces the selection of suitable MOSFETs. As a consequence it is investigated, if Silicon-Carbide (SiC) MOSFETs could represent a valid alternative. The theory of pulse timing errors are revisited for the application of high voltage and capactive loaded class D amplifiers. It is shown, that SiC MOSFETs can compete with Si MSOFETs in terms of THD. Validation is done using simulations and a 500 V amplifier driving a 100 nF load. THD+N below 0.3 % is reported

AB - Silicon (Si) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are traditional utilised in class D audio amplifiers. It has been proposed to replace the traditional inefficient electrodynamic transducer with the electrostatic transducer. This imposes new high voltage requirements on the MOSFETs of class D amplifiers, and significantly reduces the selection of suitable MOSFETs. As a consequence it is investigated, if Silicon-Carbide (SiC) MOSFETs could represent a valid alternative. The theory of pulse timing errors are revisited for the application of high voltage and capactive loaded class D amplifiers. It is shown, that SiC MOSFETs can compete with Si MSOFETs in terms of THD. Validation is done using simulations and a 500 V amplifier driving a 100 nF load. THD+N below 0.3 % is reported

M3 - Article in proceedings

BT - Proceedings of the 137th AES Convention

T2 - AES 137<sup>th</sup> Convention

Y2 - 9 October 2014 through 12 October 2014

ER -

Comparative Study of Si and SiC MOSFETs for High Voltage Class D Audio Amplifiers

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