Comparative Study of Si and SiC MOSFETs for High Voltage Class D Audio Amplifiers

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Abstract

Silicon (Si) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are traditional utilised in class D audio amplifiers. It has been proposed to replace the traditional inefficient electrodynamic transducer with the electrostatic transducer. This imposes new high voltage requirements on the MOSFETs of class D amplifiers, and significantly reduces the selection of suitable MOSFETs. As a consequence it is investigated, if Silicon-Carbide (SiC) MOSFETs could represent a valid alternative. The theory of pulse timing errors are revisited for the application of high voltage and capactive loaded class D amplifiers. It is shown, that SiC MOSFETs can compete with Si MSOFETs in terms of THD. Validation is done using simulations and a 500 V amplifier driving a 100 nF load. THD+N below 0.3 % is reported
Original languageEnglish
Title of host publicationProceedings of the 137th AES Convention
Number of pages6
Publication date2014
Publication statusPublished - 2014
EventAES 137th Convention - Los Angeles, CA, United States
Duration: 9 Oct 201412 Oct 2014

Conference

ConferenceAES 137th Convention
CountryUnited States
CityLos Angeles, CA
Period09/10/201412/10/2014

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