Comparative study of PEALD-deposited and sputtered AlN’s optical properties for mid-infrared wavelengths

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Abstract

We present a comparative study of the influence o f t he d eposition method (reactive sputtering and plasma enhanced atomic layer deposition) and film thickness (from 66 nm to 303 nm) on the AlN’s dielectric function.
Original languageEnglish
Publication date2021
Publication statusPublished - 2021
EventNovel Optical Materials and Applications 2021 - Washington, United States
Duration: 26 Jul 202129 Jul 2021

Conference

ConferenceNovel Optical Materials and Applications 2021
Country/TerritoryUnited States
CityWashington
Period26/07/202129/07/2021

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