Abstract
We present a comparative study of the influence o f t he d eposition method (reactive sputtering and plasma enhanced atomic layer deposition) and film thickness (from 66 nm to 303 nm) on the AlN’s dielectric function.
Original language | English |
---|---|
Publication date | 2021 |
Publication status | Published - 2021 |
Event | Novel Optical Materials and Applications 2021 - Washington, United States Duration: 26 Jul 2021 → 29 Jul 2021 |
Conference
Conference | Novel Optical Materials and Applications 2021 |
---|---|
Country/Territory | United States |
City | Washington |
Period | 26/07/2021 → 29/07/2021 |