Comparative Evaluation of the Loss and Thermal Performance of Advanced Three Level Inverter Topologies

Alexander Anthon, Zhe Zhang, Michael A. E. Andersen, Grahame Holmes, Brendan McGrath, Carlos Teixeira

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Abstract

This paper presents a comparative evaluation of the loss and thermal performance of two advanced three-level inverter topologies, namely the SiC based T-Type and the Hybrid-NPC, both of which are aimed at reducing the high switching losses associated with a conventional Si based T-Type inverter. The first solution directly replaces the 1200 V primary Si IGBT switches with lower loss 1200 V SiC MOSFETs. The second solution strategically adds 600 V CoolMos FET devices to the conventional Si T-Type inverter to reduce the primary commutation losses. Semiconductor loss models, experimentally
verified on calibrated heat sinks, are used to show that both variations can significantly reduce the semiconductor losses compared to the Si based T-Type inverter. The results show that both alternatives are attractive if high efficiencies and reduced thermal stress are major requirements for the converter design.
Original languageEnglish
Title of host publicationProceedings of IEEE Applied Power Electronics Conference 2016
PublisherIEEE
Publication date2016
Pages2252-2258
ISBN (Print)978-1-4673-9550-2
DOIs
Publication statusPublished - 2016
EventIEEE Applied Power Electronics Conference 2016 - Long Beach Convention & Entertainment Center, Long Beach, CA, United States
Duration: 20 Mar 201624 Mar 2016

Conference

ConferenceIEEE Applied Power Electronics Conference 2016
LocationLong Beach Convention & Entertainment Center
Country/TerritoryUnited States
CityLong Beach, CA
Period20/03/201624/03/2016

Keywords

  • T-Type
  • Hybrid-NPC
  • SiC MOSFET
  • Si IGBT
  • CoolMos

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