Comparative Evaluation of the Loss and Thermal Performance of Advanced Three Level Inverter Topologies

Alexander Anthon; Zhe Zhang; Michael A. E. Andersen; Donald Grahame Holmes; Brendan McGrath; Carlos A. Teixeira

doi:10.1109/TIA.2016.2639462

Comparative Evaluation of the Loss and Thermal Performance of Advanced Three Level Inverter Topologies

Alexander Anthon, Zhe Zhang, Michael A. E. Andersen, Donald Grahame Holmes, Brendan McGrath, Carlos A. Teixeira

RMIT University

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Abstract

This paper presents a comparative evaluation of the loss and thermal performance of two advanced three-level inverter topologies, namely the partial SiC T-Type and the Hybrid-NPC, both of which are aimed at reducing the high switching losses associated with a conventional Si T-Type inverter. The first solution directly replaces the 1200V primary Si IGBT switches with lower loss 1200V SiC MOSFETs. The second solution strategically adds 600V CoolMos FET devices to the conventional Si T-Type inverter to reduce the primary commutation losses. Semiconductor loss models, experimentally verified on calibrated heat sinks, are used to show that both variations can significantly reduce the semiconductor losses compared to the Si T-Type inverter. The results show that both alternatives are attractive if high efficiencies and reduced thermal stress are major requirements for the converter design.

Original language	English
Journal	I E E E Transactions on Industry Applications
Volume	53
Issue number	2
Pages (from-to)	1381 - 1389
ISSN	0093-9994
DOIs	https://doi.org/10.1109/TIA.2016.2639462
Publication status	Published - 2016

Bibliographical note

(c) 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works

Keywords

T-Type
Hybrid-NPC
SiC MOSFET
Si IGBT
CoolMos

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10.1109/TIA.2016.2639462

IAS 2016 SECSC 0351Accepted author manuscript, 6.45 MB

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title = "Comparative Evaluation of the Loss and Thermal Performance of Advanced Three Level Inverter Topologies",

abstract = "This paper presents a comparative evaluation of the loss and thermal performance of two advanced three-level inverter topologies, namely the partial SiC T-Type and the Hybrid-NPC, both of which are aimed at reducing the high switching losses associated with a conventional Si T-Type inverter. The first solution directly replaces the 1200V primary Si IGBT switches with lower loss 1200V SiC MOSFETs. The second solution strategically adds 600V CoolMos FET devices to the conventional Si T-Type inverter to reduce the primary commutation losses. Semiconductor loss models, experimentally verified on calibrated heat sinks, are used to show that both variations can significantly reduce the semiconductor losses compared to the Si T-Type inverter. The results show that both alternatives are attractive if high efficiencies and reduced thermal stress are major requirements for the converter design.",

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note = "(c) 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works",

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AU - Andersen, Michael A. E.

AU - Holmes, Donald Grahame

AU - McGrath, Brendan

AU - Teixeira, Carlos A.

N1 - (c) 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works

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AB - This paper presents a comparative evaluation of the loss and thermal performance of two advanced three-level inverter topologies, namely the partial SiC T-Type and the Hybrid-NPC, both of which are aimed at reducing the high switching losses associated with a conventional Si T-Type inverter. The first solution directly replaces the 1200V primary Si IGBT switches with lower loss 1200V SiC MOSFETs. The second solution strategically adds 600V CoolMos FET devices to the conventional Si T-Type inverter to reduce the primary commutation losses. Semiconductor loss models, experimentally verified on calibrated heat sinks, are used to show that both variations can significantly reduce the semiconductor losses compared to the Si T-Type inverter. The results show that both alternatives are attractive if high efficiencies and reduced thermal stress are major requirements for the converter design.

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JO - I E E E Transactions on Industry Applications

JF - I E E E Transactions on Industry Applications

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ER -

Comparative Evaluation of the Loss and Thermal Performance of Advanced Three Level Inverter Topologies

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Keywords

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