Comparative Evaluation of the Loss and Thermal Performance of Advanced Three Level Inverter Topologies

Alexander Anthon, Zhe Zhang, Michael A. E. Andersen, Donald Grahame Holmes, Brendan McGrath, Carlos A. Teixeira

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    This paper presents a comparative evaluation of the loss and thermal performance of two advanced three-level inverter topologies, namely the partial SiC T-Type and the Hybrid-NPC, both of which are aimed at reducing the high switching losses associated with a conventional Si T-Type inverter. The first solution directly replaces the 1200V primary Si IGBT switches with lower loss 1200V SiC MOSFETs. The second solution strategically adds 600V CoolMos FET devices to the conventional Si T-Type inverter to reduce the primary commutation losses. Semiconductor loss models, experimentally verified on calibrated heat sinks, are used to show that both variations can significantly reduce the semiconductor losses compared to the Si T-Type inverter. The results show that both alternatives are attractive if high efficiencies and reduced thermal stress are major requirements for the converter design.
    Original languageEnglish
    JournalI E E E Transactions on Industry Applications
    Issue number2
    Pages (from-to)1381 - 1389
    Publication statusPublished - 2016

    Bibliographical note

    (c) 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works


    • T-Type
    • Hybrid-NPC
    • SiC MOSFET
    • Si IGBT
    • CoolMos


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