Comment on "Planar Hall resistance ring sensor based on NiFe/Cu/IrMn trilayer structure" [J. Appl. Phys. 113, 063903 (2013)]

Frederik Westergaard Østerberg, Anders Dahl Henriksen, Giovanni Rizzi, Mikkel Fougt Hansen

    Research output: Contribution to journalComment/debateResearchpeer-review

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    Abstract

    In a recent paper, Sinha et al. compared sensitivities of planar Hall effect sensors with different geometries that are all based on the anisotropic magnetoresistance of permalloy. They write that the sensitivity of a planar Hall effect sensor with a ring geometry is a factor of √2 larger than the sensitivity of the so-called planar Hall effect bridge (PHEB) sensor of equal size. Osterberg et al do not agree on the signal calculation for a ring sensor derived by Sinha et al. and claim that this adversely affects the results.
    Original languageEnglish
    JournalJournal of Applied Physics
    Volume114
    Issue number10
    Pages (from-to)106101
    Number of pages2
    ISSN0021-8979
    Publication statusPublished - 2013

    Bibliographical note

    © 2013 AIP Publishing LLC

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