Collective Behavior of Interwell Excitons in GaAs/AlGaAs
                Double Quantum Wells

A. V. Larionov; V. B. Timofeev; Jørn Märcher Hvam; Claus B. Sørensen

Collective Behavior of Interwell Excitons in GaAs/AlGaAs Double Quantum Wells

A. V. Larionov, V. B. Timofeev, Jørn Märcher Hvam, Claus B. Sørensen

Department of Photonics Engineering

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

Photoluminescence spectra of interwell excitons in double GaAs/AlGaAs quantum wells (n-i-n structures) have been investigated (an interwell excition in these systems is an electron-hole pair spatially separated by a narrow AlAs barrier). Under resonance excitation by circular polarized light, the luminescence line of interwell excitions exhibits a significant narrowing and a drastic increase in the degree of circular polarization of photoluminescence with increasing exciton concentration. It is found that the radiative recombination rate significantly increases under these conditions. This phenomenon is observed at temperatures lower than the critical point and can be interpreted in terms of the collective behavior of interwell excitions.

Original language	English
Journal	J E T P Letters
Volume	71
Issue number	3
Pages (from-to)	117-122
ISSN	0021-3640
Publication status	Published - 2000

Cite this

@article{27230811a148427cbcacf84b6b91f45e,

title = "Collective Behavior of Interwell Excitons in GaAs/AlGaAs Double Quantum Wells",

abstract = "Photoluminescence spectra of interwell excitons in double GaAs/AlGaAs quantum wells (n-i-n structures) have been investigated (an interwell excition in these systems is an electron-hole pair spatially separated by a narrow AlAs barrier). Under resonance excitation by circular polarized light, the luminescence line of interwell excitions exhibits a significant narrowing and a drastic increase in the degree of circular polarization of photoluminescence with increasing exciton concentration. It is found that the radiative recombination rate significantly increases under these conditions. This phenomenon is observed at temperatures lower than the critical point and can be interpreted in terms of the collective behavior of interwell excitions.",

author = "Larionov, {A. V.} and Timofeev, {V. B.} and Hvam, {J{\o}rn M{\"a}rcher} and S{\o}rensen, {Claus B.}",

year = "2000",

language = "English",

volume = "71",

pages = "117--122",

journal = "J E T P Letters",

issn = "0021-3640",

publisher = "Pleiades Publishing",

number = "3",

}

TY - JOUR

T1 - Collective Behavior of Interwell Excitons in GaAs/AlGaAs Double Quantum Wells

AU - Larionov, A. V.

AU - Timofeev, V. B.

AU - Hvam, Jørn Märcher

AU - Sørensen, Claus B.

PY - 2000

Y1 - 2000

N2 - Photoluminescence spectra of interwell excitons in double GaAs/AlGaAs quantum wells (n-i-n structures) have been investigated (an interwell excition in these systems is an electron-hole pair spatially separated by a narrow AlAs barrier). Under resonance excitation by circular polarized light, the luminescence line of interwell excitions exhibits a significant narrowing and a drastic increase in the degree of circular polarization of photoluminescence with increasing exciton concentration. It is found that the radiative recombination rate significantly increases under these conditions. This phenomenon is observed at temperatures lower than the critical point and can be interpreted in terms of the collective behavior of interwell excitions.

AB - Photoluminescence spectra of interwell excitons in double GaAs/AlGaAs quantum wells (n-i-n structures) have been investigated (an interwell excition in these systems is an electron-hole pair spatially separated by a narrow AlAs barrier). Under resonance excitation by circular polarized light, the luminescence line of interwell excitions exhibits a significant narrowing and a drastic increase in the degree of circular polarization of photoluminescence with increasing exciton concentration. It is found that the radiative recombination rate significantly increases under these conditions. This phenomenon is observed at temperatures lower than the critical point and can be interpreted in terms of the collective behavior of interwell excitions.

M3 - Journal article

VL - 71

SP - 117

EP - 122

JO - J E T P Letters

JF - J E T P Letters

SN - 0021-3640

IS - 3

ER -