Abstract
Photoluminescence spectra of interwell excitons in double
GaAs/AlGaAs quantum wells (n-i-n structures) have been
investigated (an interwell excition in these systems is an
electron-hole pair spatially separated by a narrow AlAs barrier).
Under resonance excitation by circular polarized light, the
luminescence line of interwell excitions exhibits a significant
narrowing and a drastic increase in the degree of circular
polarization of photoluminescence with increasing exciton
concentration. It is found that the radiative recombination rate
significantly increases under these conditions. This phenomenon is
observed at temperatures lower than the critical point and can be
interpreted in terms of the collective behavior of interwell
excitions.
| Original language | English |
|---|---|
| Journal | J E T P Letters |
| Volume | 71 |
| Issue number | 3 |
| Pages (from-to) | 117-122 |
| ISSN | 0021-3640 |
| Publication status | Published - 2000 |